Quasi-One-Dimensional ZrS3 Nanoflakes for Broadband and Polarized Photodetection with High Tuning Flexibility

被引:14
作者
Chen, Feng [1 ,2 ,3 ]
Liu, Guangjian [1 ,2 ,3 ]
Xiao, Zhenyang [1 ,2 ,3 ]
Zhou, Hua [4 ]
Fei, Linfeng [1 ,2 ,3 ]
Wan, Siyuan [1 ,2 ,3 ]
Liao, Xiaxia [1 ,2 ,3 ]
Yuan, Jiaren [1 ,2 ,3 ]
Zhou, Yangbo [1 ,2 ,3 ]
机构
[1] Nanchang Univ, Sch Phys & Mat Sci, Nanchang 330031, Jiangxi, Peoples R China
[2] Nanchang Univ, Jiangxi Engn Lab Adv Funct Thin Films, Nanchang 330031, Jiangxi, Peoples R China
[3] Nanchang Univ, Jiangxi Key Lab Two Dimens Mat, Nanchang 330031, Jiangxi, Peoples R China
[4] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; zirconium trisulfide; anisotropic; polarized photodetector; field effect transistor; TOTAL-ENERGY CALCULATIONS; FEW-LAYER; PHOTOCURRENT GENERATION; HFS3; NANOBELT; ELECTRONICS; OPTOELECTRONICS; PHOTORESPONSE; PERFORMANCE; SINGLE;
D O I
10.1021/acsami.3c00273
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional (2D) layered materials with low crystal symmetries have exhibited unique anisotropic physical properties. Here, we report systematic studies on the photoresponse of field effect transistors (FETs) fabricated using quasi -one-dimensional ZrS3 nanoflakes. The as-fabricated phototransistors exhibit a broadband photocurrent response from ultraviolet to visible regions, where the responsivity and detectivity can be enhanced via additional gate voltages. Furthermore, benefiting from the strong in-plane anisotropy of ZrS3, we observe a gate-voltage and illumination wavelength-dependent polarized photocurrent response, while its sub-millisecond-time response speed is also polarization-dependent. Our results demonstrate the flexible tunability of photodetectors based on anisotropic layered semiconductors, which substantially broadens the application of low symmetry layered materials in polarization-sensitive optoelectronic devices.
引用
收藏
页码:16999 / 17008
页数:10
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