Highly Efficient Multiband Harmonic-Tuned GaN RF Synchronous Rectifier

被引：5

作者：

Hoque, Md Aminul ^{[1
]}

Ali, Sheikh Nijam ^{[2
]}

Mokri, Mohammad Ali ^{[1
]}

Gopal, Srinivasan ^{[3
]}

Chahardori, Mohammad ^{[1
]}

Johnson, Thomas ^{[4
]}

Heo, Deukhyoun ^{[1
]}

机构：

[1] Washington State Univ, Dept Elect Engn & Comp Sci, Pullman, WA 99164 USA

[2] Qualcomm Inc, San Jose, CA 95110 USA

[3] Broadcom Inc, Irvine, CA 92618 USA

[4] Univ British Columbia, Sch Engn, Kelowna, BC V1V 1V7, Canada

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2023年 / 71卷 / 11期

基金：

美国国家科学基金会;

关键词：

Class-F; inverse class-F; synchronous rectifier; wireless power transfer (WPT); DUAL-FREQUENCY TRANSFORMER; CLASS-F; POWER; RECTENNA; DESIGN; ARRAY;

D O I：

10.1109/TMTT.2023.3276065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a highly efficient GaN-based harmonic-tuned multiband RF rectifier for wireless power transfer (WPT) applications. The rectifier has been implemented by incorporating a microstrip coupler and a transmission line-based phase shifter to convert a power amplifier (PA) into a synchronous rectifier based on the time-reversal duality principle. The proposed rectifier provides a compact solution for wireless power charging systems while supporting dual-bands. The microstrip coupler is used to derive the gate driving signal for the device, which requires a weak coupling from the input RF signal. The coupler has been characterized separately for wideband operation from 1 to 3 GHz with only 0.3-dB insertion loss. Measurement results show that the rectifier has 77% and 75% efficiencies at 1.17 and 2.4 GHz, respectively, when the input RF power is 10 W. The rectifier shows >50% efficiency for input power levels down to 1.5 W. To the best of the authors' knowledge, this rectifier presents one of the highest RF-to-dc rectification efficiencies in dual-band operation for a watt-level RF input power.

引用

页码：5060 / 5072

页数：13

共 54 条

[1] Power-Efficiency Characteristics of Class-F and Inverse Class-F Synchronous Rectifiers
Abbasian, Sadegh
Johnson, Thomas
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (12) : 4740 - 4751
[2] Abbasian S, 2015, EUR MICROW CONF, P299, DOI 10.1109/EuMC.2015.7345759
[3] High efficiency GaN HEMT class-F synchronous rectifier for wireless applications
Abbasian, Sadegh
Johnson, Thomas
[J]. IEICE ELECTRONICS EXPRESS, 2015, 12 (01): : 1 - 11
[4] DC Polarity Control in Radio Frequency Synchronous Rectifier Circuits
Ali, Sheikh Nijam
Johnson, Thomas
Heo, Deukhyoun
[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2017, 27 (12) : 1107 - 1109
[5] Bharj S. S., 1992, IEEE Antennas and Propagation Society International Symposium. 1992 Digest. Held in Conjuction with: URSI Radio Science Meeting and Nuclear EMP Meeting (Cat. No.92CH3178-1), P123, DOI 10.1109/APS.1992.221986
[6] Brown W., P 1958 IRE INT CONVE, P8, DOI [10.1109/IRECON.1964.1147324, DOI 10.1109/IRECON.1964.1147324]
[7] Brown W. C., 1973, 3 EUR MICR C SEP, V2, P1
[8] A transformer of one-third wavelength in two sections - For a frequency and its first harmonic
Chow, YL
Wan, KL
[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2002, 12 (01) : 22 - 23
[9] CRIPPS SC, 2020, P INMMIC, P1
[10] A 2.4-GHz CMOS Class-E Synchronous Rectifier
Dehghani, Soroush
Johnson, Thomas
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (05) : 1655 - 1666

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