Research progress in solar-blind UV detectors based on wide-band semiconductor Ga2O3

Ga2O3 is an ultra-wide band semiconductor corresponding to the deep ultraviolet(UV) spectrum, which can be used to prepare solar-blind UV detectors. The solar-blind ultraviolet detectors are widely used in military and aerospace fields dueto strong anti-interference ability, high detection sensitivity and low background noise.The basic properties of Ga2O3 materials, including different crystal structures and their preparation, and the recent progress in solar-blind UV detectors based on Ga2O3 were introduced in this paper. Among them, metal-semiconductor-metal (MSM) structure of Ga2O3 devices are the most common, which are expected to achieve business application with commercial parameters. The Ga2O3-based heterostructure and Schottky detectors also exhibit excellent performance and self-supply characteristics. In addition, Ga2O3 devices based on thin film transistor become a potential solar-blind ultraviolet detector. They combine the working mechanism of MSM and transistor structure to obtain high light gain, which are suitable for weak signal detection.