Studies of the crystal structure of solid solutions (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x grown from liquid phase

被引：1
作者：
Razzokov, A. Sh. [1 ]
Saidov, A. S. [2 ]
Allabergenov, B. [1 ]
Choi, B. [3 ,4 ]
Petrushenko, S. I. [5 ]
Dukarov, S. V. [5 ]
机构：
[1] Urgench State Univ, Kh Alimdjan 14, Urgench, Uzbekistan
[2] Acad Sci Uzbek, Phys Tech Inst NPO Phys Sun, Ch Aitmatova 2B, Tashkent, Uzbekistan
[3] Daegu Gyeongbuk Inst Sci & Technol DGIST, Div Elect & Informat Syst, Daegu 42988, South Korea
[4] Daegu Gyeongbuk Inst Sci & Technol DGIST, Dept Interdisciplinary Engn, Daegu 42988, South Korea
[5] VN Kharkiv Natl Univ Karazin, Svobody Sq 4s, Kharkiv, Ukraine
来源：
JOURNAL OF CRYSTAL GROWTH | 2023年 / 612卷
关键词：
Crystallization; Solid solution; Epitaxy; Heterostructure; X-ray diffractometry; Substrate; GALLIUM-ARSENIDE;
D O I：
10.1016/j.jcrysgro.2023.127203
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The possibility of growing (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x solid solutions on a GaAs(1 0 0) substrate is shown at the temperature of the beginning of crystallization, respectively, TOC = 570 degrees C and TOC = 750 degrees C by the method of liquid-phase epitaxy from a limited tin solution-melt in the cooling rate range of 0.5-3 K/min. The content of the chemical composition and the perfection of the substrate-film boundary of epitaxial layers of solid solutions (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x were studied using a scanning electron microscope (SEM).X-ray diffraction studies have shown that the resulting films are single-crystal with (100) orientation and have a sphalerite structure. Using a transmission electron microscope (TEM), we obtained HR TEM images of (GaAs)1_x(ZnSe)x poly-and single-crystal samples grown at a crystallization onset temperature TOC = 750 degrees C with forced cooling at a rate of 3 deg/min. and 1 deg/min. Some electrophysical and photoelectric properties of the samples have been studied.
引用
收藏
页数：9
相关论文
共 50 条
  • [31] Thermoelectric Properties of the Chalcopyrite Solid Solutions ZnGe1-x Sn x P2
    Ramirez, Daniel
    Menezes, Luke T.
    Kleinke, Holger
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 6 (05) : 2942 - 2950
  • [32] Optical properties of GaNxAsyP1−x−y semiconductor quaternary solid solutions
    N. V. Kryzhanovskaya
    A. Yu. Egorov
    E. V. Pirogov
    M. S. Sobolev
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2012, 6 : 479 - 481
  • [33] Synthesis and thermoelectric properties of Mg2Si1-x Sn x solid solutions by microwave irradiation
    Zhou Shu-cai
    Bai Chen-guang
    JOURNAL OF CENTRAL SOUTH UNIVERSITY, 2012, 19 (09) : 2421 - 2424
  • [34] Sr1-xCexFe1-yCoyO3 (x ≤0.15,0<y < 1) solid solutions
    V. V. Vashuk
    O. P. Ol’shevskaya
    V. F. Savchenko
    L. V. Kokhanovskii
    O. V. Strukova
    V. E. Lukashevich
    Inorganic Materials, 2000, 36 : 1173 - 1177
  • [35] X-ray diffraction studies of heterostructures based on solid solutions AlxGa1 − xAsyP1 − y: Si
    P. V. Seredin
    V. E. Ternovaya
    A. V. Glotov
    A. S. Len’shin
    I. N. Arsent’ev
    D. A. Vinokurov
    I. S. Tarasov
    H. Leiste
    T. Prutskij
    Physics of the Solid State, 2013, 55 : 2161 - 2164
  • [36] Dielectric characteristics and phase transitions in Tl(InS2)1 − x(FeSe2)x solid solutions
    A. U. Sheleg
    V. G. Hurtavy
    S. N. Mustafaeva
    E. M. Kerimova
    V. V. Shautsova
    Physics of the Solid State, 2012, 54 : 607 - 610
  • [37] Raman study on structure of U1-yGdyO2-x (y=0.005, 0.01, 0.03, 0.05 and 0.1) solid solutions
    Lee, Jeongmook
    Kim, Jandee
    Youn, Young-Sang
    Liu, Nazhen
    Kim, Jong-Goo
    Ha, Yeong-Keong
    Shoesmith, David W.
    Kim, Jong-Yun
    JOURNAL OF NUCLEAR MATERIALS, 2017, 486 : 216 - 221
  • [38] Crystal structure, thermoelectric and magnetic properties of the type-I clathrate solid solutions Sn24P19.3(2)BrxI8-x (0 ≤ X ≤ 8) and Sn24P19.3(2)ClyI8-y (y ≤ 0.8)
    Zaikina, Julia V.
    Schnelle, Walter
    Kovnir, Kirill A.
    Olenev, Andrei V.
    Grin, Yuri
    Shevelkov, Andrei V.
    SOLID STATE SCIENCES, 2007, 9 (08) : 664 - 671
  • [39] Influence of tellurium impurity on the Properties of Ga1−XInXAsYSb1−Y (X>0.22) solid solutions
    T. I. Voronina
    T. S. Lagunova
    E. V. Kunitsyna
    Ya. A. Parkhomenko
    M. A. Sipovskaya
    Yu. P. Yakovlev
    Semiconductors, 2002, 36 : 855 - 862
  • [40] Predicting the Phase Stability of Sc1-x Ln x PO4 (Ln = Gd-Lu, Y) Zircon-Structured Solid Solutions
    Get'man, E. I.
    Radio, S. V.
    Ardanova, L. I.
    INORGANIC MATERIALS, 2018, 54 (06) : 596 - 600
12345