Studies of the crystal structure of solid solutions (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x grown from liquid phase

被引：1
作者：
Razzokov, A. Sh. [1 ]
Saidov, A. S. [2 ]
Allabergenov, B. [1 ]
Choi, B. [3 ,4 ]
Petrushenko, S. I. [5 ]
Dukarov, S. V. [5 ]
机构：
[1] Urgench State Univ, Kh Alimdjan 14, Urgench, Uzbekistan
[2] Acad Sci Uzbek, Phys Tech Inst NPO Phys Sun, Ch Aitmatova 2B, Tashkent, Uzbekistan
[3] Daegu Gyeongbuk Inst Sci & Technol DGIST, Div Elect & Informat Syst, Daegu 42988, South Korea
[4] Daegu Gyeongbuk Inst Sci & Technol DGIST, Dept Interdisciplinary Engn, Daegu 42988, South Korea
[5] VN Kharkiv Natl Univ Karazin, Svobody Sq 4s, Kharkiv, Ukraine
来源：
JOURNAL OF CRYSTAL GROWTH | 2023年 / 612卷
关键词：
Crystallization; Solid solution; Epitaxy; Heterostructure; X-ray diffractometry; Substrate; GALLIUM-ARSENIDE;
D O I：
10.1016/j.jcrysgro.2023.127203
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The possibility of growing (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x solid solutions on a GaAs(1 0 0) substrate is shown at the temperature of the beginning of crystallization, respectively, TOC = 570 degrees C and TOC = 750 degrees C by the method of liquid-phase epitaxy from a limited tin solution-melt in the cooling rate range of 0.5-3 K/min. The content of the chemical composition and the perfection of the substrate-film boundary of epitaxial layers of solid solutions (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x were studied using a scanning electron microscope (SEM).X-ray diffraction studies have shown that the resulting films are single-crystal with (100) orientation and have a sphalerite structure. Using a transmission electron microscope (TEM), we obtained HR TEM images of (GaAs)1_x(ZnSe)x poly-and single-crystal samples grown at a crystallization onset temperature TOC = 750 degrees C with forced cooling at a rate of 3 deg/min. and 1 deg/min. Some electrophysical and photoelectric properties of the samples have been studied.
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页数：9
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