Studies of the crystal structure of solid solutions (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x grown from liquid phase

被引：1

作者：

Razzokov, A. Sh. ^{[1
]}

Saidov, A. S. ^{[2
]}

Allabergenov, B. ^{[1
]}

Choi, B. ^{[3
,4
]}

Petrushenko, S. I. ^{[5
]}

Dukarov, S. V. ^{[5
]}

机构：

[1] Urgench State Univ, Kh Alimdjan 14, Urgench, Uzbekistan

[2] Acad Sci Uzbek, Phys Tech Inst NPO Phys Sun, Ch Aitmatova 2B, Tashkent, Uzbekistan

[3] Daegu Gyeongbuk Inst Sci & Technol DGIST, Div Elect & Informat Syst, Daegu 42988, South Korea

[4] Daegu Gyeongbuk Inst Sci & Technol DGIST, Dept Interdisciplinary Engn, Daegu 42988, South Korea

[5] VN Kharkiv Natl Univ Karazin, Svobody Sq 4s, Kharkiv, Ukraine

来源：

JOURNAL OF CRYSTAL GROWTH | 2023年 / 612卷

关键词：

Crystallization; Solid solution; Epitaxy; Heterostructure; X-ray diffractometry; Substrate; GALLIUM-ARSENIDE;

D O I：

10.1016/j.jcrysgro.2023.127203

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The possibility of growing (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x solid solutions on a GaAs(1 0 0) substrate is shown at the temperature of the beginning of crystallization, respectively, TOC = 570 degrees C and TOC = 750 degrees C by the method of liquid-phase epitaxy from a limited tin solution-melt in the cooling rate range of 0.5-3 K/min. The content of the chemical composition and the perfection of the substrate-film boundary of epitaxial layers of solid solutions (Sn2)1_x_y(GaAs)x(ZnSe)y, (GaAs)1_x(ZnSe)x were studied using a scanning electron microscope (SEM).X-ray diffraction studies have shown that the resulting films are single-crystal with (100) orientation and have a sphalerite structure. Using a transmission electron microscope (TEM), we obtained HR TEM images of (GaAs)1_x(ZnSe)x poly-and single-crystal samples grown at a crystallization onset temperature TOC = 750 degrees C with forced cooling at a rate of 3 deg/min. and 1 deg/min. Some electrophysical and photoelectric properties of the samples have been studied.

引用

页数：9

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