A universal chemical approach to the growth of self-assembled vanadium dioxide nanostructures

被引:1
作者
V. Ivanov, Alexey [1 ]
Makarevich, Olga N. [2 ]
Gavdush, Arsenii A. [3 ]
Bogutskii, Alexander A. [3 ]
Anzin, Vladimir B. [3 ]
V. Boytsova, Olga [1 ,2 ]
机构
[1] Lomonosov Moscow State Univ, Dept Mat Sci, 1-73 Leninskie Gory, Moscow 119991, Russia
[2] Lomonosov Moscow State Univ, Dept Chem, 1-3 Leninskie Gory, Moscow 119991, Russia
[3] Russian Acad Sci, Prokhorov Gen Phys Inst, 38 Vavilova St, Moscow 119991, Russia
关键词
VO2; Metal-insulator transition; Self-assembly; Hydrothermal synthesis; Nanostructures; THz modulation; METAL-INSULATOR-TRANSITION; TITANATE THIN-FILM; LARGE-SCALE; VO2; SPECTROSCOPY; PERFORMANCE; FABRICATION; ARRAYS;
D O I
10.1016/j.ceramint.2023.12.355
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Vanadium dioxide (VO2) nanocrystalline materials are of great interest as for modern electronics and photonics as well as for energy saving technologies. Nevertheless, there still remains a challenge to realize their controllable synthesis, as evidenced by the low rate of implantation of existing technologies into mass production. Here, a hydrothermal reaction in a water -ethylene glycol (EG) solution has been coupled with the post -deposition annealing, yielding a range of phase -pure vanadium dioxide nanostructures on single -crystal r -sapphire substrate. A directed change in the viscosity of the precursor solution by using a change in the EG : H2O ratio makes it possible to control the nucleation rate and thus form VO2 isolated nanocrystals, as well as their ordered ensembles with regular distribution and uniform films on the substrate. The obtained nanostructures were extensively characterized by Raman spectroscopy, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy combined with energy -dispersive X-ray spectroscopy. Continuous VO2 nanostructures demonstrated a metal -insulator transition (MIT) with a jump in resistivity of about 103-104, as well as a giant terahertz (THz) modulation depth up to 86 % (in the range from 0.3 to 2.0 THz), which confirms their high -quality and the possibility of their use in the creation of functional electronic and THz optical devices.
引用
收藏
页码:10427 / 10435
页数:9
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