MOVPE grown InGaAs quantum dots with emission near 1.3 μm for electrically driven single-photon sources

被引：2
|
作者：
Zimmer, M. [1 ]
Trachtmann, A.
Jetter, M.
Michler, P.
机构：
[1] Univ Stuttgart, Inst Halbleiteropt & Funkt Grenzflachen IHFG, Ctr Integrated Quantum Sci & Technol IQ, Allmandring 3, D-70569 Stuttgart, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2023年 / 605卷
关键词：
Characterizatio; Metalorganic vapor phase epitaxy; Quantum dots; InGaAs; Semiconducting III-V materials; Light emitting diodes;
D O I：
10.1016/j.jcrysgro.2023.127081
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InGaAs quantum dots (QDs) with low areal density suitable for single-photon applications are fabricated on a GaAs substrate by MOVPE. AFM measurements used to investigate the dependency of QD density and size on the V/III ratio during growth reveal a low QD density of 3.2 center dot 10(7) cm(-2) for a high V/III ratio of 360. To allow for a targeted electrical excitation, the InGaAs QDs are embedded into a pin-LED structure containing an oxide aperture. Low temperature electroluminescence measurements show emission of a QD line at a wavelength of 1272.4 nm. Direct comparison of photoluminescence and electroluminescence spectra approve the electrical excitation of a single QD.
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页数：4
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