Probing Enhanced Electron-Phonon Coupling in Graphene by Infrared Resonance Raman Spectroscopy

被引:12
|
作者
Venanzi, Tommaso [1 ]
Graziotto, Lorenzo [1 ]
Macheda, Francesco [2 ]
Sotgiu, Simone [1 ]
Ouaj, Taoufiq [3 ,4 ]
Stellino, Elena [5 ]
Fasolato, Claudia [6 ]
Postorino, Paolo [1 ]
Miseikis, Vaidotas [2 ,7 ]
Metzelaars, Marvin [8 ]
Koegerler, Paul [8 ]
Beschoten, Bernd [3 ,4 ]
Coletti, Camilla [2 ,7 ]
Roddaro, Stefano [9 ]
Calandra, Matteo [10 ]
Ortolani, Michele [1 ]
Stampfer, Christoph [3 ,4 ]
Mauri, Francesco [1 ,2 ]
Baldassarre, Leonetta [1 ]
机构
[1] Sapienza Univ Rome, Dept Phys, Piazzale Aldo Moro 5, I-00185 Rome, Italy
[2] Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
[3] Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany
[4] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany
[5] Univ Perugia, Dept Phys & Geol, via Alessandro Pascoli, I-06123 Perugia, Italy
[6] Inst Complex Syst, Natl Res Council ISC CNR, I-00185 Rome, Italy
[7] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Piazza San Silvestro 12, I-56126 Pisa, Italy
[8] Rhein Westfal TH Aachen, Inst Inorgan Chem, D-52074 Aachen, Germany
[9] Univ Pisa, Dept Phys, Largo B Pontecorvo 3, I-56127 Pisa, Italy
[10] Univ Trento, Dept Phys, Via Sommar 14, I-38123 Povo, Italy
关键词
APPROXIMATION; TOOL;
D O I
10.1103/PhysRevLett.130.256901
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at K, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D' peaks with respect to that measured in graphite. Comparing with fully ab initio theoretical calculations, we conclude that the observation is explained by an enhanced, momentum -dependent coupling between electrons and Brillouin zone-boundary optical phonons. This finding applies to two-dimensional Dirac systems and has important consequences for the modeling of transport in graphene devices operating at room temperature.
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页数:7
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