Measurement of dielectric function and bandgap of germanium telluride using monochromated electron energy-loss spectroscopy

被引:0
|
作者
Oh, Jin-Su [1 ]
Jo, Kyu-Jin [1 ]
Kang, Min-Chul [1 ]
An, Byeong-Seon [1 ]
Kwon, Yena [1 ]
Lim, Hyeon-Wook [2 ]
Cho, Mann-Ho [2 ]
Baik, Hionsuck [3 ]
Yang, Cheol-Woong [1 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
[2] Yonsei Univ, Dept Phys, Seoul 03722, South Korea
[3] Korea Basic Sci Inst KBSI, Seoul Ctr, Seoul 02841, South Korea
关键词
Electron energy -loss spectroscopy; Transmission electron microscopy; Dielectric function; Bandgap; Germanium telluride; Phase -change materials; DER-WAALS GAPS; LOSS SPECTRA; RECONFIGURATION; MEMORY;
D O I
10.1016/j.micron.2023.103487
中图分类号
TH742 [显微镜];
学科分类号
摘要
Using a monochromator in transmission electron microscopy, a low-energy-loss spectrum can provide inter- and intra-band transition information for nanoscale devices with high energy and spatial resolutions. However, some losses, such as Cherenkov radiation, phonon scattering, and surface plasmon resonance superimposed at zero-loss peak, make it asymmetric. These pose limitations to the direct interpretation of optical properties, such as complex dielectric function and bandgap onset in the raw electron energy-loss spectra. This study demonstrates measuring the dielectric function of germanium telluride using an off-axis electron energy-loss spectroscopy method. The interband transition from the measured complex dielectric function agrees with the calculated band structure of germanium telluride. In addition, we compare the zero-loss subtraction models and propose a reliable routine for bandgap measurement from raw valence electron energy-loss spectra. Using the proposed method, the direct bandgap of germanium telluride thin film was measured from the low-energy-loss spectrum in transmission electron microscopy. The result is in good agreement with the bandgap energy measured using an optical method.
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页数:8
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