A 41-GHz 19.4-dBm Psat CMOS Doherty power amplifier for 5G NR applications

被引：0

作者：

Li, Zheng ^{[1
]}

Chen, Zixin ^{[1
]}

Wang, Qiaoyu ^{[1
]}

Liu, Junqing ^{[1
]}

Pang, Jian ^{[1
]}

Shirane, Atsushi ^{[1
]}

Okada, Kenichi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro ku, Tokyo 1528552, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2023年 / 20卷 / 05期

关键词：

41GHz; CMOS; Doherty; power amplifier; 5G New Radio; BROAD-BAND; MIMO; DESIGN;

D O I：

10.1587/elex.20.20220558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a 41-GHz Doherty power amplifier (PA) in stan-dard 65 nm CMOS technology is introduced for 5G New Radio (NR) ap-plications. The proposed PA implements the transformer-based parallel -combined Doherty structure to enhance the power-added efficiency (PAE). A tunable 90-deg hybrid coupler is proposed for output phase compensa-tion. This work achieves a saturated output power (P-sat) of 19.4 dBm and an OP1dB of 18.6 dBm at 41.5 GHz under a 1-V power supply. The peak PAE and the PAE at 6-dB output power back-off (PBO) are 30.4% and 19.2%, respectively. This work also supports single-carrier mode (SC-mode) 400-MSymbols/s 256QAM and OFDMA-mode 400-MHz 256QAM. The core chip area is 0.22 mm(2) with a static power consumption of 76 mW.

引用

页码：6 / 6

页数：1

共 50 条

[31] A 24-GHz power amplifier with Psat of 15.9 dBm and PAE of 14.6 % using standard 0.18 μm CMOS technology [J].

Lin, Yo-Sheng ;

Chang, Jing-Ning .

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2014, 79 (03) :427-435

[32] A 24-GHz power amplifier with Psat of 15.9 dBm and PAE of 14.6 % using standard 0.18 μm CMOS technology [J].

Yo-Sheng Lin ;

Jing-Ning Chang .

Analog Integrated Circuits and Signal Processing, 2014, 79 :427-435

[33] 28 GHz 19.5 dBm Stacked Power Amplifier With 32% PAE For 5G Communication [J].

Mustafa, Alaa Khairalla ;

Abdalla, Mohamed A. Y. .

31ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS (IEEE ICM 2019), 2019, :214-218

[34] 60GHz CMOS Power Amplifier with 20-dB-Gain and 12dBm Psat [J].

Dawn, Debasis ;

Sarkar, Saikat ;

Sen, Padmanava ;

Perumana, Bevin ;

Leung, Matthew ;

Mallavarpu, Navin ;

Pinel, Stephane ;

Laskar, Joy .

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, :537-540

[35] A Symmetric Wideband Doherty Power Amplifier for the n78-5G NR Frequency Band [J].

Peppas, Ioannis ;

Takahashi, Hiroaki ;

Paulitsch, Helmut ;

Bosch, Wolfgang .

2022 18TH INTERNATIONAL CONFERENCE ON WIRELESS AND MOBILE COMPUTING, NETWORKING AND COMMUNICATIONS (WIMOB), 2022,

[36] A Stacked Transistors CMOS SOI Power Amplifier For 5G Applications [J].

Ma, Zhize ;

Conrad, Nathan J. ;

Mohammadi, Saeed .

2022 IEEE 22ND TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2022, :1-4

[37] A 26-42 GHz Broadband, Back-off efficient and VSWR Tolerant CMOS Power Amplifier Architecture for 5G Applications [J].

Chappidi, Chandrakanth R. ;

Sengupta, Kaushik .

2019 SYMPOSIUM ON VLSI CIRCUITS, 2019, :C22-C23

[38] Broadband GaN MMIC Doherty Power Amplifier Using Continuous-Mode Combining for 5G Sub-6 GHz Applications [J].

Pang, Jingzhou ;

Chu, Chenhao ;

Wu, Jiayan ;

Dai, Zhijiang ;

Li, Mingyu ;

He, Songbai ;

Zhu, Anding .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2022, 57 (07) :2143-2154

[39] A 38-GHz High Linearity and High Efficiency Power Amplifier for 5G Applications in 65-nm CMOS [J].

Li, Xin-Yi ;

Chen, Yu-Chun ;

Wang, Yunshan ;

Huang, Tian-Wei ;

Wang, Huei .

2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2020, :178-181

[40] A Wideband Power Amplifier with 13.2 dBm PSAT and 19.5% PAE for 60∼94 GHz Wireless Communication Systems in 90 nm CMOS [J].

Lin, Yo-Sheng ;

Van Kien Nguyen ;

Gao, Jia-Wei ;

Wang, Chien-Chin ;

Lin, Yun-Wen ;

Chen, Chih-Chung .

2016 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2016, :95-98

← 1 2 3 4 5 →