A 41-GHz 19.4-dBm Psat CMOS Doherty power amplifier for 5G NR applications

In this letter, a 41-GHz Doherty power amplifier (PA) in stan-dard 65 nm CMOS technology is introduced for 5G New Radio (NR) ap-plications. The proposed PA implements the transformer-based parallel -combined Doherty structure to enhance the power-added efficiency (PAE). A tunable 90-deg hybrid coupler is proposed for output phase compensa-tion. This work achieves a saturated output power (P-sat) of 19.4 dBm and an OP1dB of 18.6 dBm at 41.5 GHz under a 1-V power supply. The peak PAE and the PAE at 6-dB output power back-off (PBO) are 30.4% and 19.2%, respectively. This work also supports single-carrier mode (SC-mode) 400-MSymbols/s 256QAM and OFDMA-mode 400-MHz 256QAM. The core chip area is 0.22 mm(2) with a static power consumption of 76 mW.