Annealing effect on the photocurrent response of SnS thin films prepared by the chemical spray pyrolysis method

SnS thin films were synthesized using the spray pyrolysis method and then annealed at 350, 400, and 450 & DEG;C. According to the crystallographic analysis, the obtained SnS thin films crystallized in the polycrystalline orthorhombic system. The grains measured 47, 66, and 37 nm for the samples annealed at 350, 400, and 450 & DEG;C, respectively. SEM and AFM images indicate that the samples' surfaces were completely covered. Thus, the grains of SnS nanostructures have a granular-like shape and vary in size depending on the annealing temperatures. The transmittance measurement shows that annealing the sample at 400 & DEG;C extends and improves its absorption range to 600 nm. The resulting band gap energies were 1.60 eV, 1.30 eV, and 2.55 eV for annealing at 350 & DEG;C, 400 & DEG;C, and 450 & DEG;C, respectively. Hall Effect measurements reveal that annealing SnS films at 400 & DEG;C enhances their electrical properties. The values of carrier mobility, conductivity, and carrier concentration are 1.678 x10(5)Cm2/Vs, 9.756 x10(-5)Omega(-1)cm(-1), and 3.168 x10(10)Cm(-3), respectively. Additionally, the photocurrent response validates that all samples annealed at 350, 400, and 450 & DEG;C have p-type conductivity, with values of 13, 28, and 2.5 mu A/Cm2, respectively. The best conductivity, carrier mobility, and photocurrent values are obtained by annealing at 400 & DEG;C. Therefore, SnS thin films can be an interesting choice for absorber layer applications in photovoltaic systems.