Printed Graphene Electrode for ITO/MoS2/Graphene Photodiode Application

Lightweight and flexible electronics have recently emerged at the forefront of optoelectronic applications. In this regard, graphene electrodes enable opportunities for new photodiode devices. In this paper, we formulated and tested graphene ink using the standard inkjet printing technique. It was shown that the maximum conductivity of ink was achieved for 14 print passes of the graphene layer. Moreover, we deposited Molybdenum Disulfide (MoS2) ink in the same pattern and used it as an active layer. We put MoS2 ink on an Indium-Tin-Oxide (ITO) glass substrate and then deposited graphene ink as a top electrode to fabricate an ITO/MoS2/graphene device. The fabricated device showed good rectification behavior and high ON/OFF switching behavior with a max photocurrent of 15 mu A at +2 V. The technique thus paves the way for low-cost, low-temperature processing of electronics and one-step fabrication.