Selective area doping for Mott neuromorphic electronics

被引：29

作者：

Deng, Sunbin ^{[1
]}

Yu, Haoming ^{[1
]}

Park, Tae Joon ^{[1
]}

Islam, A. N. M. Nafiul ^{[2
]}

Manna, Sukrit ^{[3
,4
]}

Pofelski, Alexandre ^{[5
]}

Wang, Qi ^{[1
]}

Zhu, Yimei ^{[5
]}

Sankaranarayanan, Subramanian K. R. S. ^{[3
,4
]}

Sengupta, Abhronil ^{[2
]}

Ramanathan, Shriram ^{[1
]}

机构：

[1] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

[2] Penn State Univ, Sch Elect Engn & Comp Sci, University Pk, PA 16802 USA

[3] Ctr Nanoscale Mat Natl Lab, Lemont, IL 60439 USA

[4] Univ Illinois, Dept Mech Ind Engn, Chicago, IL 60607 USA

[5] Dept Condensed Matter Phys & Mat Sci, Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

SCIENCE ADVANCES | 2023年 / 9卷 / 11期

基金：

美国国家科学基金会;

关键词：

VANADIUM DIOXIDE; PHASE-TRANSITION; NEURAL-NETWORKS; VO2; TEMPERATURE; INSULATOR;

D O I：

10.1126/sciadv.ade4838

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO2) artificial neurons and synapses on the same substrate through selective area carrier doping. By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility can be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices are successfully integrated on a single chip. Feedforward excitation and inhibition neural motifs are demonstrated at hardware level, followed by simulation of network-level handwritten digit and fashion product recognition tasks with experimental characteristics. Spatially selective electron doping opens up previously unidentified avenues for integration of emerging correlated semiconductors in electronic device technologies.

引用

页数：10

共 56 条

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