Synergistic effects of optimal negative bias-enhanced growth of quenched-produced diamond films on titanium substrates

被引:4
|
作者
Osman, Lama [1 ,2 ]
Zkria, Abdelrahman [1 ,2 ]
Ali, Ali M. [1 ,3 ]
Nagano, Satoki [1 ]
Naragino, Hiroshi [1 ]
Yoshitake, Tsuyoshi [1 ]
机构
[1] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan
[2] Aswan Univ, Fac Sci, Dept Phys, Aswan 81528, Egypt
[3] Al Azhar Univ, Fac Sci, Dept Phys, Cairo 11884, Egypt
关键词
quenched-produced diamond; titanium; negative bias-enhanced growth; room temperature; hybrid ion etching gun and coaxial arc plasma deposition; ULTRANANOCRYSTALLINE DIAMOND; CARBON; RAMAN;
D O I
10.35848/1882-0786/acdfb7
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on negative bias-enhanced growth of quenched-produced diamond films on titanium using hybrid coaxial arc plasma deposition at room temperature. Optimizing the bias voltage to -40 V resulted in a spontaneous formation of a titanium carbide interfacial layer, which caused a significant increase in the adhesion strength from 16 to 48 N. Selective etching of undesired sp (2)-C bonded atoms and ultrafast quenching of the energetic carbon ions (C+) promoted the growth of dense sp (3)-C bonded atoms, achieving a superhardness of 96 GPa, comparable to natural diamond. These pioneering findings have the potential to revolutionize multifunctional materials for biomedical applications.
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页数:5
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