Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS)

被引：11

作者：

Yang, Shangyu ^{[1
,2
]}

Zhao, Siqi ^{[1
,2
]}

Chen, Junhong ^{[1
,2
]}

Yan, Guoguo ^{[1
,3
]}

Shen, Zhanwei ^{[1
,3
]}

Zhao, Wanshun ^{[1
]}

Wang, Lei ^{[1
]}

Zhang, Yang ^{[1
,2
,3
]}

Liu, Xingfang ^{[1
,2
,3
]}

Sun, Guosheng ^{[1
,2
,3
]}

Zeng, Yiping ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R China

[3] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2023年 / 612卷

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

A1; TCS; A2; 4H-SiC; A3; Chemical vapor deposition processes; B2; Semiconducting silicon compounds; SILICON-CARBIDE; RAMAN-SCATTERING; DEFECTS; FILMS;

D O I：

10.1016/j.jcrysgro.2022.127058

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

TCS (SiHCl3) is widely used in the rapid growth of SiC. However, in the study of using TCS to grow 4H-SiC, the growth temperature is mainly concentrated in 1550-1650 degrees C, and the research on lower growth temperature is lacking. In this study, TCS was used as the silicon precursor and epitaxial layers were grown in the temperature range of 1350-1500 degrees C. The results show that the single crystal type 4H-SiC epitaxial layer with good quality can be obtained at the growth temperature of 1450 celcius.

引用

页数：5

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