Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

被引：7

作者：

Liu, Wenkai ^{[1
,2
]}

Chen, Songsong ^{[1
]}

Liu, Yun ^{[1
]}

Wen, Zhican ^{[1
]}

Jiang, Fuman ^{[1
]}

Xue, Zhongying ^{[1
]}

Wei, Xing ^{[1
]}

Yu, Yuehui ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

来源：

CRYSTENGCOMM | 2023年 / 25卷 / 24期

基金：

中国国家自然科学基金;

关键词：

LARGE-EDDY SIMULATION; TURBULENT MELT FLOW; LARGE CZ SYSTEM; ELECTRICAL-CONDUCTIVITY; OXYGEN DISTRIBUTIONS;

D O I：

10.1039/d3ce00017f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A local three-dimensional model of heat and mass transfer for 300 mm Czochralski silicon crystal growth with a transverse magnetic field was presented. The model implemented a PID control system and main physical effects including release of crystallization latent heat, crystallization interface correction, Marangoni effects, oxygen transport, and electromagnetic effects. A method including an additional data processing step was developed for crystallization interface correction. This method is particularly suitable for obtaining an axisymmetric interface under a non-axisymmetric flow when the crystal rotates. The simulation results show that the inhomogeneity of temperature, growth-rate and oxygen concentration on the crystallization interface is caused by melt convection. This phenomenon may provide theoretical support for controlling oxygen content. Furthermore, the model is validated at different solidified fractions, and the simulation results of oxygen concentration are in good agreement with the experimental results.

引用

页码：3493 / 3500

页数：9

共 35 条

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