Evaluation of Zn: WO3 Thin Films as a Sensing Layer for Detection of NH3 Gas

被引:2
作者
Anusha [1 ]
Kumari, Priyanka [2 ]
Poornesh, P. [1 ]
Chattopadhyay, Saikat [3 ]
Rao, Ashok D. [1 ]
Kulkarni, Suresh [4 ]
机构
[1] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, India
[2] Manipal Univ Jaipur, Sch Basic Sci, Dept Chem, Jaipur 303007, India
[3] Manipal Univ Jaipur, Sch Basic Sci, Dept Phys, Jaipur 303007, India
[4] Manipal Acad Higher Educ, Dept Atom & Mol Phys, Manipal 576104, India
关键词
WO3; NH3; sensing; Zn doping; defects; SENSOR; PERFORMANCE; SENSITIVITY; NANOSHEETS;
D O I
10.3390/mi14040732
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Pristine WO3 and Zn-doped WO3 were synthesized using the spray pyrolysis technique to detect ammonia gas. The prominent orientation of the crystallites along the (200) plane was evident from X-ray diffraction (XRD) studies. Scanning Electron Microscope (SEM) morphology indicated well-defined grains upon Zn doping with a smaller grain size of 62 nm for Zn-doped WO3 (Zn: WO3) film. The photoluminescence (PL) emission at different wavelengths was assigned to defects such as oxygen vacancies, interstitial oxygens, localized defects, etc. X-ray Photoelectron spectroscopy (XPS) studies confirmed the formation of oxygen vacancies in the deposited films. The ammonia (NH3) sensing analysis of the deposited films was carried out at an optimum working temperature of 250 degrees C. The sensor performance of Zn: WO3 was enhanced compared to pristine WO3 at 1 ppm NH3 concentration, elucidating the possibility of the films in sensing applications.
引用
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页数:12
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