Effect of Mesoporous Silica as a Solid Precursor on the Properties of Silicon Oxycarbide Thin Films via Hot Filament Chemical Vapor Deposition

被引：0

作者：

Balderas, Ivan Enrique Garcia ^{[1
]}

Ruiz, Crisoforo Morales ^{[1
]}

Andres, Enrique Rosendo ^{[1
]}

Cruz, Maria Ana Perez ^{[2
]}

Hernandez, Erick Gastellou ^{[3
]}

Isasmendi, Reina Galeazzi ^{[1
]}

Solis, Antonio Coyopol ^{[1
]}

Salgado, Godofredo Garcia ^{[1
]}

Trujillo, Roman Romano ^{[1
]}

机构：

[1] Benemerita Univ Autonoma Puebla BUAP, Ctr Invest Disposit Semicond, Puebla 72570, Puebla, Mexico

[2] Benemerita Univ Autonoma Puebla BUAP, Fac Ciencias Quim, Puebla 72570, Puebla, Mexico

[3] Univ Sonora, Dept Invest Fis, Hermosillo 83000, Sonora, Mexico

来源：

CHEMISTRYSELECT | 2024年 / 9卷 / 10期

关键词：

Silicon oxycarbide; mesoporous silica; chemical vapor deposition; photoluminescence; tetraethoxysilane; MECHANICAL-PROPERTIES; DEFECTS; SURFACE; SIO2;

D O I：

10.1002/slct.202305119

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This study investigates the impact of mesoporous silica tablets on the synthesis and properties of silicon oxycarbide thin films produced via Hot Filament Chemical Vapor Deposition. Results reveal significant variations in composition and cluster morphology, influenced by the introduction of mesoporous silica tablets. The study demonstrates controlled deposition, consistent synthesis, and the substantial impact of mesoporous silica tablets on the composition, structure, and optical properties of thin films. These findings offer new possibilities for tailor design applications in electronics, optics, and sensors. Silicon oxycarbide thin films are prepared by Hot Filament Chemical Vapor Deposition, using mesoporous silica and Tetraethyl orthosilicate as precursors. A comprehensive analysis is conducted to elucidate the influence of mesoporous silica as a precursor on the properties of the resulting thin films. The study aims to discern and characterize the structural, morphological, and compositional properties of the thin films. image

引用

页数：16

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