Cr3+-activated NaInSi2O6: An efficient broadband near-infrared phosphor with its applications in LED

被引:11
作者
Chen, Shuyang [1 ]
Han, Mingxiao [1 ]
Li, Jie [1 ]
Li, Yingguang [1 ]
Gao, Zhexuan [1 ]
Zhang, Yi [1 ]
Meng, Mengmeng [1 ]
Zhang, Qihao [1 ]
Deng, Degang [1 ]
Chen, Liang [1 ]
机构
[1] China Jiliang Univ, Inst Optoelect Mat & Devices, Key Lab Rare Earth Optoelect Mat & Devices Zhejian, Hangzhou 310018, Peoples R China
关键词
NaInSi2O6:Cr3+; NIR emitting; Clinopyroxene; Pc-LED; LIGHT-EMITTING-DIODES; SPECTROSCOPY; LUMINESCENCE; EMISSION;
D O I
10.1016/j.ceramint.2023.08.320
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A novel near-infrared (NIR) emitting Cr3+-doped clinopyroxene NaInSi2O6 phosphor is designed and synthesized by solid-state method. There are three absorption bands in the NaInSi2O6: 0.04Cr(3+) phosphor, peaking at similar to 300 nm, similar to 470 nm and similar to 690 nm, respectively. A broad emission band ranging from 700 nm to 1300 nm is detected at 466 nm excitation, peaking at 936 nm with a full width at half maximum (FWHM) of 151 nm. At the same time, the calculated weak crystal field strength of Cr3+ is 1.93 in the NaInSi2O6 host, resulting in its characteristic broadband emission. Furthermore, the internal quantum efficiency (IQE) and external quantum efficiency (EQE) of NaInSi2O6: 0.04Cr(3+) are 68.9% and 27.4%. The integrated emission intensity of NaInSi2O6: 0.04Cr(3+) at 423 K retains 55.2% of that at 293 K. By contrast, the NaInSi2O6: 0.04Cr(3+)-based phosphor-in-glass (PiG) exhibits better thermal stability (64.9%@423 K). A NIR phosphor-converted light emitting diode (pc-LED) was manufactured using a InGaN chip and NaInSi2O6: 0.04Cr(3+), presenting the NIR output power of 30.47 mW@200 mA. Used as a NIR light source, the prepared pc-LED shows good promise in the fields of biological tissue imaging and night vision.
引用
收藏
页码:36360 / 36367
页数:8
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