4H-SiC Surface Modified by a Green Femtosecond Laser at Low Fluence

被引：2

作者：

Liu, Yi-Hsien ^{[1
]}

Cheng, Chung-Wei ^{[1
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Dept Mech Engn, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan

来源：

JOURNAL OF LASER MICRO NANOENGINEERING | 2023年 / 18卷 / 03期

关键词：

femtosecond laser; single pulse; low fluence ablation; silicon carbide (SiC); ABLATION; SILICON;

D O I：

10.2961/jlmn.2023.03.2008

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study used a single femtosecond laser pulse with a wavelength of 515 nm to irradiate the 4H-SiC sample surface. The pulse energy was 1740-2110 nJ, and the effective fluence was around 1.27-1.54 J/cm2. The ablation threshold is 1.26 J/cm2. The surface morphology and the ablation depth were measured by scanning electron microscopy (SEM) and atomic force microscope (AFM). The ablation depth is around 12 nm. On the other hand, a simplified model with a two-temperature model and dynamic optical model was used to predict the ablation threshold. The simulation result shows that the ablation threshold is around 1.2 J/cm2, which is matched the experimental results.

引用

页码：157 / 160

页数：4

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