P-N heterojunction NiO/ZnO nanowire based electrode for asymmetric supercapacitor applications

被引:12
作者
Ahmad, Reyaz [1 ]
Sohail, Aamir [1 ]
Yousuf, Mahvesh [1 ]
Majeed, Asif [1 ]
Mir, Arshid [1 ]
Aalim, Malik [1 ]
Shah, M. A. [1 ]
机构
[1] Natl Inst Technol Srinagar, Dept Phys, Srinagar 190006, J&K, India
关键词
NiO/ZnO; nanowires; XPS; electrochemical performance; power density; supercapacitor; HIGH-PERFORMANCE SUPERCAPACITOR; REDUCED GRAPHENE OXIDE; NICKEL COBALT OXIDE; FABRICATION; MORPHOLOGY; COMPOSITE; CARBON;
D O I
10.1088/1361-6528/ad06d3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nickel-based oxides are selected for their inexpensive cost, well-defined redox activity, and flexibility in adjusting nanostructures via optimization of the synthesis process. This communique explores the field of energy storage for hydrothermally synthesized NiO/ZnO nanowires by analysing their capacitive behaviour. The p-type NiO was successfully built onto the well-ordered mesoporous n-type ZnO matrix, resulting in the formation of p-n heterojunction artefacts with porous nanowire architectures. NiO/ZnO nanowire-based electrodes exhibited much higher electrochemical characteristics than bare NiO nanowires. The heterojunction at the interface between the NiO and ZnO nanoparticles, their specific surface area, as well as their combined synergetic influence, are accountable for the high specific capacitance (C s) of 1135 Fg-1 at a scan rate of 5 mV s-1. NiO/ZnO nanowires show an 18% dip in initial capacitance even after 6000 cycles, indicating excellent capacitance retention and low resistance validated by electrochemical impedance spectroscopy. In addition, the specific capacitance, energy and power density of the solid state asymmetric capacitor that was manufactured by employing NiO/ZnO as the positive electrode and activated carbon as the negative electrode were found to be 87 Fg-1, 23 Whkg-1 and 614 Wkg-1, respectively. The novel electrode based on NiO/ZnO demonstrates excellent electrochemical characteristics all of which point to its promising application in supercapacitor devices.
引用
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页数:13
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