Vertical β-Ga2O3 metal-insulator-semiconductor diodes with an ultrathin boron nitride interlayer

被引：12

作者：

Xu, Mingfei ^{[1
]}

Biswas, Abhijit ^{[2
]}

Li, Tao ^{[1
]}

He, Ziyi ^{[3
]}

Luo, Shisong ^{[1
]}

Mei, Zhaobo ^{[1
]}

Zhou, Jingan ^{[1
]}

Chang, Cheng ^{[1
]}

Puthirath, Anand B. ^{[2
]}

Vajtai, Robert ^{[2
]}

Ajayan, Pulickel M. ^{[2
]}

Zhao, Yuji ^{[1
]}

机构：

[1] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA

[2] Rice Univ, Dept Mat Sci & Nanoengn, Houston, TX 77005 USA

[3] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 23期

关键词：

SCHOTTKY; GROWTH;

D O I：

10.1063/5.0176578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we demonstrate the high performance of beta-Ga2O3 metal-insulator-semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on the Ga2O3 substrate by pulsed laser deposition. X-ray photoelectron spectroscopy, Raman spectroscopy, and high-resolution transmission electron microscopy confirm the existence of a 2.8 nm BN interlayer. Remarkably, with the insertion of the ultrathin BN layer, the breakdown voltage is improved from 732 V for Ga2O3 Schottky barrier diodes to 1035 V for Ga2O3 MIS diodes owing to the passivated surface-related defects and reduced reverse leakage currents. Our approach shows a promising way to improve the breakdown performance of Ga2O3-based devices for next-generation high-power electronics.

引用

页数：6

共 50 条

[11] Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga2O3 [J].

Leblanc, Chloe ;

Herath Mudiyanselage, Dinusha ;

Song, Seunguk ;

Zhang, Huairuo ;

Davydov, Albert V. ;

Fu, Houqiang ;

Jariwala, Deep .

NANOSCALE, 2023, 15 (23) :9964-9972

[12] Phase Transition of Two-Dimensional β-Ga2O3 Nanosheets from Ultrathin γ-Ga2O3 Nanosheets and Their Photocatalytic Hydrogen Evolution Activities [J].

Zhang, Xiaoyan ;

Huang, Huijuan ;

Zhang, Yingguang ;

Liu, Dan ;

Tong, Na ;

Lin, Jinjin ;

Chen, Lu ;

Zhang, Zizhong ;

Wang, Xuxu .

ACS OMEGA, 2018, 3 (10) :14469-14476

[13] Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD [J].

Park, Ji-Hyeon ;

McClintock, Ryan ;

Razeghi, Manijeh .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (08)

[14] Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kamimura, Takafumi ;

Wong, Man Hoi ;

Krishnamurthy, Daivasigamani ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2013, 103 (12)

[15] Vertical β-Ga2O3 Power Transistors: Fundamentals, Designs, and Opportunities [J].

Zhou, Jingbo ;

Zhou, Xuanze ;

Liu, Qi ;

Wong, Man Hoi ;

Xu, Guangwei ;

Yang, Shu ;

Long, Shibing .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) :1513-1522

[16] Size-Dependent Phase Transition in Ultrathin Ga2O3 Nanowires [J].

Wang, Jiaheng ;

Guan, Xiaoxi ;

Zheng, He ;

Zhao, Ligong ;

Jiang, Renhui ;

Zhao, Peili ;

Zhang, Ying ;

Hu, Jie ;

Li, Pei ;

Jia, Shuangfeng ;

Wang, Jianbo .

NANO LETTERS, 2023, 23 (16) :7364-7370

[17] Effects of microwave plasma treatment on β-Ga2O3 Schottky barrier diodes [J].

Fang, Paiwen ;

Rao, Chang ;

Liao, Chao ;

Chen, Shujian ;

Wu, Zhisheng ;

Lu, Xing ;

Chen, Zimin ;

Wang, Gang ;

Liang, Jun ;

Pei, Yanli .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (11)

[18] Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals [J].

Yao, Yao ;

Gangireddy, Raveena ;

Kim, Jaewoo ;

Das, Kalyan Kumar ;

Davis, Robert F. ;

Porter, Lisa M. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (03)

[19] Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers [J].

Wang, X. ;

Zhang, G. Z. ;

Xu, Y. ;

Gan, X. W. ;

Chen, C. ;

Wang, Z. ;

Wang, Y. ;

Wang, J. L. ;

Wang, T. ;

Wu, H. ;

Liu, C. .

NANOSCALE RESEARCH LETTERS, 2016, 11 :1-5

[20] Thermal design of multi-fin Ga2O3 vertical transistors [J].

Chatterjee, Bikramjit ;

Li, Wenshen ;

Nomoto, Kazuki ;

Xing, Huili Grace ;

Choi, Sukwon .

APPLIED PHYSICS LETTERS, 2021, 119 (10)

← 1 2 3 4 5 →