Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing

Withthe continuous scaling down of the modern integrated circuits,conventional metal-oxide-semiconductor field effect transistors arebecoming inefficient due to various nonideal effects such as enhancedshort-channel effects. Recently, emerging two-dimensional (2D) ferroelectricshave demonstrated their ability to maintain ferroelectricity at thenanoscale and have shown superior properties compared to three-dimensionalferroelectrics. Here, we report a ferroelectric field effect transistorcomposed of all 2D van der Waals (vdWs) heterostructures and providea comprehensive study of the modulation of ferroelectric polarizationon the carrier transport properties. Remarkably, the ferroelectricpolarization allowed for achieving an ultralow subthreshold swingof just 26 mV/dec and a high carrier mobility of up to 72.3 cm(2)/(V s) at a smaller drain voltage of 10 mV. These impressivecharacteristics offer new insights into evaluating the regulatoryeffect of ferroelectric polarization on the electrical propertiesof all 2D vdWs heterostructures.