Single-Crystal Germanium by Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) Technique for Monolithic 3D ICs

被引：1

作者：

Chung, Hao-Tung ^{[1
]}

Pan, Yu-Ming ^{[2
]}

Lin, Nein-Chih ^{[3
]}

Hong, Zhong-Jie ^{[2
]}

Shih, Bo-Jheng ^{[2
]}

Yang, Chih-Chao ^{[3
]}

Shen, Chang-Hong ^{[3
]}

Huang, Po-Tsang ^{[2
]}

Cheng, Huang-Chung ^{[1
]}

Chen, Kuan-Neng ^{[1
]}

Hu, Chenming ^{[2
,4
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan

[3] Taiwan Semicond Res Inst, Natl Appl Res Labs, Hsinchu 30078, Taiwan

[4] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 07期

关键词：

Monolithic; 3D; germanium; single-crystal; laser crystallization; epitaxy; low thermal budget; THIN-FILM TRANSISTORS; GRAIN-BOUNDARY; ON-INSULATOR; SILICON; INTEGRATION;

D O I：

10.1109/LED.2023.3275181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) and the fabrication of Ge Fin field-effect transistors (FinFETs) for the monolithic three-dimensional integrated circuits (monolithic 3D ICs). This technique permitted the fabrication of single-crystalline (100) Ge film and FinFETs without random grain boundaries. In comparison with the poly-Ge FinFETs, the ELLPE Ge FinFETs exhibit superior performance and uniformity. Moreover, the ANSYS simulated maximum temperature of bottom circuits during the ELLPE technique does not exceed 400 ?, therefore allowing monolithic 3D integration of ICs.

引用

页码：1036 / 1039

页数：4

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