150 GHz High-Power Photodiode by Flip-Chip Bonding

被引：8

作者：

Wei, Chao ^{[1
]}

Xie, Xiaojun ^{[1
]}

Wang, Ziyun ^{[1
]}

Chen, Yake ^{[1
]}

Zeng, Zhongming ^{[2
]}

Zou, Xihua ^{[1
]}

Pan, Wei ^{[1
]}

Yan, Lianshan ^{[1
]}

机构：

[1] Southwest Jiaotong Univ, Sch Informat Sci & Technol, Chengdu 611756, Peoples R China

[2] Sci & Technol China, Hefei 230026, Peoples R China

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2023年 / 41卷 / 23期

关键词：

Bandwidth; III-V semiconductor materials; Flip-chip devices; Photodiodes; Frequency measurement; Diamonds; Indium phosphide; Flip-chip bonding; high-speed photodetector; microwave photonics; photodiode; TRAVELING-CARRIER PHOTODIODE; HIGH-SPEED; HIGH-RESPONSIVITY; PERFORMANCE; EFFICIENCY;

D O I：

10.1109/JLT.2023.3305516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report high-power modified uni-traveling carrier photodiodes with 150-GHz bandwidth. To improve the RF output power, the photodiode chips are flip-chip bonded on diamond submounts with high thermal conductivity to enhance heat dissipation. Measured 3-dB bandwidths of 4-mu m, 6-mu m, 8-mu m, and 10-mu m diameter photodiodes reach 150 GHz, 129 GHz, 117 GHz, and 105 GHz, respectively. RF output power with 12.7 dBm at 90 GHz, 11.3 dBm at 100 GHz, 8.5 dBm at 110 GHz, -3 dBm at 150 GHz, and -5.7 dBm at 165 GHz are achieved.

引用

页码：7238 / 7244

页数：7

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