Dynamic performance evaluation of ultra-fast SiC MOSFET power module-a comprehensive approach

被引：1

作者：

Zieba, Dawid ^{[1
]}

Rabkowski, Jacek ^{[2
]}

机构：

[1] Medcom Co, Jutrzenki 78A, PL-02230 Warsaw, Poland

[2] Warsaw Univ Technol, Inst Control & Ind Elect, Koszykowa 75, PL-00662 Warsaw, Poland

来源：

PRZEGLAD ELEKTROTECHNICZNY | 2023年 / 99卷 / 05期

关键词：

SiC MOSFET; fast-switching; power modules; dynamic performances;

D O I：

10.15199/48.2023.05.33

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The article describes a comprehensive approach to dynamic performance determination tests of SiC MOSFET power modules. Experimental verification was performed using ultra-fast switching (1,2 kV, 495 A) module from Microsemi. The obtained results are compared to results acquired by measurements performed with compliance to a commonly-used standard that does not consider phenomena that significantly impact switching processes of fast-switching SiC MOSFET power modules.

引用

页码：190 / 195

页数：6

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