FORMATION OF Mn4Si7/Si(111), CrSi2/Si(111), AND CoSi2/Si(111) THIN FILMS AND EVALUATION OF THEIR OPTICALLY DIRECT AND INDIRECT BAND GAPS

被引：4

作者：

Dovranov, K. T. ^{[1
]}

Normuradov, M. T. ^{[1
]}

Davranov, Kh. T. ^{[1
]}

Bekpulatov, I. R. ^{[1
]}

机构：

[1] Karshi State Univ, Karshi 180100, Uzbekistan

来源：

UKRAINIAN JOURNAL OF PHYSICS | 2024年 / 69卷 / 01期

关键词：

FTIR spectroscopy; transmission spectroscopy; UV absorption; band gap; thin films;

D O I：

10.15407/ujpe69.1.20

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Now, silicon -based heterostructured nanocomposites are of great interest. Despite the fact that silicon semiconductor films (crystalline, polycrystalline, amorphous) have been systematically studied for a long time, heterostructural films are new materials, the study of which began relatively recently. We will produce and investigate the properties of heterostructured Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) thin films using infrared and ultraviolet spectroscopies. Absorption, transmission, and diffuse reflectance spectra are obtained applying FTIR spectroscopy instruments and a UV spectrophotometer. The band gap energies calculated from the transmission spectra are in the interval 0.32-1.31 eV for films deposited on the silicon substrates and in the interval 0.36-1.25 eV for the glass substrates.

引用

收藏

页码：20 / 25

页数：6

相关论文

共 50 条

[41] Preferential grain growth and improved fatigue endurance in Sr substituted PZT thin films on Pt(111)/TiOx/SiO2/Si substrates [J].

Karan, N. K. ;

Thomas, R. ;

Pavunny, S. P. ;

Saavedra-Arias, J. J. ;

Murari, N. M. ;

Katiyar, R. S. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 482 (1-2) :253-255

[42] Deposition of NiFe(200) and NiFe(111) textured films onto Si/SiO2 substrates by DC magnetron sputtering [J].

Dzhumaliev, A. S. ;

Nikulin, Yu. V. ;

Filimonov, Yu. A. .

PHYSICS OF THE SOLID STATE, 2016, 58 (05) :1053-1057

[43] Nucleation and Growth Dynamics of MBE-Grown Topological Insulator Bi2Te3 Films on Si (111) [J].

Borisova, Svetlana ;

Krumrain, Julian ;

Mussler, Gregor ;

Luysberg, Martina ;

Gruetzmacher, Detlev .

PHYSICS OF SEMICONDUCTORS, 2013, 1566 :191-+

[44] nm-Co2Si, CoSi and CoSi2 silicide films from the single source precursor CoSiCl3(CO)4 in the presence of SiH4 [J].

Prokop, J ;

Zybill, CE ;

Veprek, S .

THIN SOLID FILMS, 2000, 359 (01) :39-45

[45] Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy [J].

Baba, M. ;

Toh, K. ;

Toko, K. ;

Hara, K. O. ;

Usami, N. ;

Saito, N. ;

Yoshizawa, N. ;

Suemasu, T. .

JOURNAL OF CRYSTAL GROWTH, 2013, 378 :193-197

[46] Effects of Mn doping on dielectric and ferroelectric properties of (Pb, Sr)TiO3 films on (111) Pt/Ti/SiO2/Si substrates [J].

Yang, J. ;

Meng, X. J. ;

Shen, M. R. ;

Sun, J. L. ;

Chu, J. H. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (09)

[47] Energy level alignment at the Si(111)/RCA-SiO2/copper(II) phthalocyanine ultra-thin film interface [J].

Krzywiecki, Maciej ;

Grzadziel, Lucyna .

APPLIED SURFACE SCIENCE, 2014, 311 :740-748

[48] Ion beam induced chemical and morphological changes in TiO2 films deposited on Si(111) surface by pulsed laser deposition [J].

Mohanta, R. R. ;

Medicherla, V. R. R. ;

Mohanta, K. L. ;

Nayak, Nimai C. ;

Majumder, S. ;

Solanki, V. ;

Varma, Shikha ;

Bapna, Komal ;

Phase, D. M. ;

Sathe, V. .

APPLIED SURFACE SCIENCE, 2015, 325 :185-191

[49] Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy [J].

Khan, M. Ajmal ;

Saito, T. ;

Nakamura, K. ;

Baba, M. ;

Du, W. ;

Toh, K. ;

Toko, K. ;

Suemasu, T. .

THIN SOLID FILMS, 2012, 522 :95-99

[50] DC sputtering of highly c-axis AlN films on top of 3C-SiC (111)-on-Si (111) substrates under various N2 concentrations [J].

Iqbal, Abid ;

Walker, Glenn ;

Hold, Leonie ;

Fernandes, Alanna ;

Iacopi, Alan ;

Mohd-Yasin, Faisal .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (06)

← 1 2 3 4 5 →