FORMATION OF Mn4Si7/Si(111), CrSi2/Si(111), AND CoSi2/Si(111) THIN FILMS AND EVALUATION OF THEIR OPTICALLY DIRECT AND INDIRECT BAND GAPS

被引：4

作者：

Dovranov, K. T. ^{[1
]}

Normuradov, M. T. ^{[1
]}

Davranov, Kh. T. ^{[1
]}

Bekpulatov, I. R. ^{[1
]}

机构：

[1] Karshi State Univ, Karshi 180100, Uzbekistan

来源：

UKRAINIAN JOURNAL OF PHYSICS | 2024年 / 69卷 / 01期

关键词：

FTIR spectroscopy; transmission spectroscopy; UV absorption; band gap; thin films;

D O I：

10.15407/ujpe69.1.20

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Now, silicon -based heterostructured nanocomposites are of great interest. Despite the fact that silicon semiconductor films (crystalline, polycrystalline, amorphous) have been systematically studied for a long time, heterostructural films are new materials, the study of which began relatively recently. We will produce and investigate the properties of heterostructured Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) thin films using infrared and ultraviolet spectroscopies. Absorption, transmission, and diffuse reflectance spectra are obtained applying FTIR spectroscopy instruments and a UV spectrophotometer. The band gap energies calculated from the transmission spectra are in the interval 0.32-1.31 eV for films deposited on the silicon substrates and in the interval 0.36-1.25 eV for the glass substrates.

引用

页码：20 / 25

页数：6

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