FORMATION OF Mn4Si7/Si(111), CrSi2/Si(111), AND CoSi2/Si(111) THIN FILMS AND EVALUATION OF THEIR OPTICALLY DIRECT AND INDIRECT BAND GAPS

Now, silicon -based heterostructured nanocomposites are of great interest. Despite the fact that silicon semiconductor films (crystalline, polycrystalline, amorphous) have been systematically studied for a long time, heterostructural films are new materials, the study of which began relatively recently. We will produce and investigate the properties of heterostructured Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) thin films using infrared and ultraviolet spectroscopies. Absorption, transmission, and diffuse reflectance spectra are obtained applying FTIR spectroscopy instruments and a UV spectrophotometer. The band gap energies calculated from the transmission spectra are in the interval 0.32-1.31 eV for films deposited on the silicon substrates and in the interval 0.36-1.25 eV for the glass substrates.