An All-Silicon Metalens Integrated with a Mid-Wave Infrared Black Phosphorus Photodiode

被引:9
|
作者
Lien, Max R. [1 ]
Wang, Nan [2 ]
Wenger, Tobias [3 ]
Wang, Han [1 ,2 ]
Gunapala, Sarath D. [3 ]
Povinelli, Michelle L. [1 ]
机构
[1] Univ Southern Calif, Ming Hsieh Dept Elect & Comp Engn, Los Angeles, CA 90089 USA
[2] Univ Southern Calif, Mork Family Dept Chem Engn & Mat Sci, Los Angeles, CA 90089 USA
[3] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA
基金
美国国家航空航天局;
关键词
black phosphorus; infrared photodetectors; layered materials; metasurfaces; signal enhancement; PHOTODETECTOR;
D O I
10.1002/adom.202301952
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Black phosphorus (BP) is a promising material for mid-wave infrared (MWIR) photodetection because of its direct tunable bandgap and compatibility with a wide range of substrates, particularly silicon. However, optical signal collection in BP devices can be limited by its absorber thickness or active area. Dielectric metasurface lenses, which can be directly integrated into a device's substrate, are a scalable approach to increase the signal collected by BP photodetectors. This work presents the design, fabrication, and characterization of an all-silicon metasurface lens for focusing MWIR light through its substrate. Then, a BP-MoS2 heterojunction photodetector is integrated with the metalens, and MWIR photodetection increases at room temperature. These results demonstrate that integrated metasurface lenses are an excellent approach for boosting the performance of MWIR BP photodetectors. An all-silicon metalens is integrated with the substrate of a mid-wave infrared (MWIR) black phosphorus (BP) photodiode. The metalens concentrates light, through the device substrate, onto a smaller detector active region. The integrated metalens increases photocurrent generation and detector performance in the mid-wave infrared and at room temperature.image
引用
收藏
页数:7
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