Fabrication of selective and highly sensitive triethylamine gas sensor using In2O3-SnO2 hollow nanospheres in room temperature activated by UV irradiation

被引:20
作者
Cai, Zhicheng [1 ]
Park, Sunghoon [2 ,3 ,4 ]
机构
[1] Sejong Univ, Dept Software Convergence, 209 Neungdong Ro, Seoul, South Korea
[2] Sejong Univ, Dept Semicond Syst Engn, 209 Neungdong Ro, Seoul, South Korea
[3] Sejong Univ, Dept Intelligent & Mechatron Engn, 209 Neungdong Ro, Seoul, South Korea
[4] Sejong Univ, Inst Semicond & Syst IC, 209 Neungdong Ro, Seoul, South Korea
来源
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T | 2023年 / 26卷
关键词
Triethylamine sensor; UV irradiation; Room temperature; OXYGEN VACANCIES; NO2; GAS; SENSING PERFORMANCE; LIGHT IRRADIATION; ZNO NANOWIRES; FORMALDEHYDE; ENHANCEMENT; MECHANISMS;
D O I
10.1016/j.jmrt.2023.09.049
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Introducing a groundbreaking solution, a room-temperature (RT, 25 degrees C) gas sensor addresses complexities in conventional sensors, promising enhanced performance. Synthesized through hydrothermal and thermal calcination processes, SnO2 hollow nanospheres (HNs) are integrated with In2O3 components to bolster sensing capabilities. The sensor detects triethylamine (TEA) gas upon UV light irradiation, owing to its unique surface properties and SnO2-SnO2 and SnO2-In2O3 homo-and heterojunctions. This results in unparalleled sensitivity to TEA gas (Ra/Rg 1/4 34-100 ppm) and an exceptional limit of detection (3.98 ppt), attributed to photo-ionized O2-ions' heightened reactivity. The study proposes superior sensors backed by comprehensive analyses, demonstrating their performance improvements and underlying mechanisms. The optimized sensor design, based on In2O3-appended SnO2 HNs, presents exceptional selectivity, pattern recognition for low TEA gas concentrations, humidity resistance, and reliability under UV irradiation.(c) 2023 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
引用
收藏
页码:6581 / 6596
页数:16
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