Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials

被引：3

作者：

Park, Junbum ^{[1
]}

Pala, Marco ^{[1
]}

Saint-Matin, Jerome ^{[1
]}

机构：

[1] Univ Paris Saclay, Ctr Nanosci & Nanotechnol, Palaiseau, France

来源：

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年

关键词：

Monte Carlo method; density functional theory; 2D materials; lateral heterostructure; phonon transport; BORON-NITRIDE; CONDUCTANCE;

D O I：

10.23919/SISPAD57422.2023.10319605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have presented a stochastic Monte Carlo algorithm parameterized with ab initio calculations to investigate the thermal transport across lateral interfaces between two-dimensional materials, with a focus on hexagonal boron nitride and Graphene heterostructures. Ab initio parameters are incorporated into the Monte Carlo simulation, enhancing the accuracy of thermal properties. The interface thermal conductance, temperature profiles, response times, and modal contributions of phonon modes in all transport regimes are theoretically studied. This research significantly contributes to our understanding of thermal properties at the nanoscale, providing essential insights for electronics and energy management applications.

引用

页码：21 / 24

页数：4

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