Electron structure effects of S-doped In2O3 flowers on NO2 sensitivity

被引:8
作者
Bai, Yue-Jie [1 ]
Liu, Li-Ying [2 ]
Duan, Xun-Kai [1 ]
Zhang, Guang-Xuan [2 ]
Wang, Chao [1 ]
Zhou, Xin-Yu [1 ]
Wang, Changhao [1 ]
Wang, Bing-Rong [3 ]
Wei, Xiao-Lin [4 ,5 ]
Wang, Ru-zhi [1 ]
机构
[1] Beijing Univ Technol, Inst Adv Energy Mat & Devices, Fac Mat & Mfg, Key Lab Adv Funct Mat,Educ Minist China, Beijing 100124, Peoples R China
[2] Beijing Univ Technol, Fac Sci, Beijing 100124, Peoples R China
[3] Hainan Univ, Coll Mat Sci & Engn, State Key Lab Marine Resource Utilizat South China, Haikou 570228, Peoples R China
[4] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China
[5] Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
关键词
S-doped; Electron structure; NO2 gas sensor; HYDROTHERMAL SYNTHESIS; SENSING PROPERTIES; MESOPOROUS IN2O3; GAS; SENSOR; H2S; NANOCOMPOSITES; NANOPARTICLES; MICROSPHERES; PERFORMANCE;
D O I
10.1016/j.materresbull.2023.112293
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To further develop sensing materials for NO2 gas detection practical application, the operating temperature of the sensor should be significantly reduced. In this paper, In2O3 flowers were prepared by the microwave-assisted hydrothermal method. Then, In2O3 was doped using TAA (thioacetamide). The prepared S-doped In2O3 flowers have good gas sensitivity and significantly reduced operating temperature. When exposed to 10 ppm NO2 gas, the corresponding response was 250 at 118 degrees C. It can be demonstrated by the first principle calculations, in which the doping of S atoms changes the electron structure of In2O3 from semiconductor to metal with a lower potential barrier. Then, significantly affects the electron crossing the intergranular potential barriers. Therefore, the operating temperature of the sensor can be reduced. Our research results will provide new research ideas and technical approaches for designing, fabricating, and applying a new generation of In2O3 gas sensors.
引用
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页数:10
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