A Snapback-Free and High-Performance Trench Gate Reverse-Conducting SOI-LIGBT With Self-Adaptive nMOS

A snapback-free and high-performance trench gate reverse conducting (RC) lateral insulated gate bipolar transistor based on silicon-on-insulator(SOI-LIGBT) is proposed. With an integrated Schock leydiode, the RC and snapback-free forward conducting are accomplished. With a self-adaptive trench gate nMOS,fast and soft reverse recovery as well as low peak forward recovery voltage (VFRM) is achieved for the diode mode, and low turn-off loss (Eoff) is achieved for the latera linsulated gate bipolar transistor (LIGBT) mode. With aself-adaptive planar gate nMOS, the forward ON-statevoltage drop (VCE(sat)) can be reduced. By using a deep trench with p-ring (DTP), high dynamic avalanche immunity(DAI) is obtained. The trench gate DAI LIGBT combined with a p-i-n diode with a DPT (DTP p-i-n diode) is usedfor comparison, where the total area of the proposed RC-IGBT is reduced by 42%. Simulation results show that the proposed RC-LIGBT can safely turn off under 100%breakdown voltage and reduce E off by 60% compared to the DAI LIGBT. The reverse recovery charge (Qrr) of the proposed RC-LIGBT is 38% of the DTP p-i-n diode and19% of the conventional p-i-n diode. The reverse recovery softness (S) is increased to 1.05 compared to the DTPp-i-n diode (S=0.14) and the conventional p-i-n diode(S=0.11).