Controlling Resistive Switching Modes of Ferrocene-Containing Polyelectrolyte Layer-by-Layer Nanofilms

被引：6

作者：

Ishizaki, Yuya ^{[1
,2
]}

Watanabe, Akito ^{[1
]}

Yamamoto, Shunsuke ^{[1
]}

Mitsuishi, Masaya ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Sendai 9808579, Japan

[2] Rikkyo Univ, Coll Sci, Dept Chem, 3-34-1 Nishi Ikebukuro, Toshima, Tokyo 1718501, Japan

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2023年 / 5卷 / 07期

基金：

日本学术振兴会;

关键词：

electron hopping; ion migration; polymer segmentmotion; redox reaction; water uptake; FILMS; INTERDIFFUSION; THICKNESS; OXIDATION; DEVICE;

D O I：

10.1021/acsaelm.3c00644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wepropose controlling ion diffusion and electron hopping in apolymer-based resistive switching device consisting of ferrocene (Fc)-containingpolyelectrolyte nanofilms as a switching layer and PEDOT:PSS filmsas a top electrode. The switching layer was fabricated onto ITO electrodesusing the layer-by-layer (LbL) method of Fc-containing branched polyethyleneimine(bPEI-Fc) and poly(styrene sulfonate) (PSS). Current-voltagecharacteristics of the ITO|(bPEI-Fc/PSS)( n )|PEDOT:PSS device with a simple sandwich structure exhibited resistiveswitching and short-circuited behavior; the characteristics dependedon the Fc contents and relative humidity. Cyclic voltammetry and electrochemicalimpedance spectroscopy measurements indicated that the interdistancebetween nearby Fc units and the polymer segment motion coupled withwater penetration govern the current-voltage characteristics.This study elucidates unique features of polymer-based resistive switchingdevices, paving the way for neuromorphic and wearable electronicsapplications.

引用

页码：3957 / 3964

页数：8

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