D-band 4-ch Antenna-on-Chip Phased-Array TX Front-End

被引：1

作者：

Kuwabara, Toshihide ^{[1
]}

Oshima, Naoki ^{[1
]}

Tanji, Koki ^{[1
]}

Tawa, Noriaki ^{[1
]}

Hachiyama, Shinji ^{[1
]}

Kaneko, Tomoya ^{[1
]}

机构：

[1] NEC Corp Ltd, Tokyo, Japan

来源：

2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS | 2023年

关键词：

D-band; Phased-Array; Phase Shifter; Power Amplifier; Antenna-on-Chip;

D O I：

10.1109/BCICTS54660.2023.10310881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a D-band phased-array TX front-end with 4 antenna elements on chip implemented in a 22-nm SOI-CMOS process. The TX front-end consists of a wideband vector synthesis phase shifter, power amplifier and antenna. The phase shifter has a gain of -7dB and is a switching-based digitally controlled phase shifter with excellent phase control stability over temperature. The power amplifier delivers 8.5 dBm output P-1dB and 23 dB gain at 150 GHz. The antenna is realized on the chip with a tapered slot and radiates towards the edge of the chip. A Dband phased-array module equipped with four of these is realized on a single chip.

引用

页码：183 / 186

页数：4

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