D-band 4-ch Antenna-on-Chip Phased-Array TX Front-End

被引：1
|
作者：
Kuwabara, Toshihide [1 ]
Oshima, Naoki [1 ]
Tanji, Koki [1 ]
Tawa, Noriaki [1 ]
Hachiyama, Shinji [1 ]
Kaneko, Tomoya [1 ]
机构：
[1] NEC Corp Ltd, Tokyo, Japan
来源：
2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS | 2023年
关键词：
D-band; Phased-Array; Phase Shifter; Power Amplifier; Antenna-on-Chip;
D O I：
10.1109/BCICTS54660.2023.10310881
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report a D-band phased-array TX front-end with 4 antenna elements on chip implemented in a 22-nm SOI-CMOS process. The TX front-end consists of a wideband vector synthesis phase shifter, power amplifier and antenna. The phase shifter has a gain of -7dB and is a switching-based digitally controlled phase shifter with excellent phase control stability over temperature. The power amplifier delivers 8.5 dBm output P-1dB and 23 dB gain at 150 GHz. The antenna is realized on the chip with a tapered slot and radiates towards the edge of the chip. A Dband phased-array module equipped with four of these is realized on a single chip.
引用
收藏
页码：183 / 186
页数：4
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