Room-Temperature Lateral Spin Valve in Graphene/Fe3GaTe2 van der Waals Heterostructures

Theremarkable electronic properties of two-dimensional van derWaals (vdW) materials make them promising platforms for next-generationspintronic devices. In this study, we demonstrate the room-temperaturegraphene lateral spin valve devices in the Fe3GaTe2/graphene full vdW heterostructure. The spin transport channelis few-layer graphene, and room-temperature ferromagnet Fe3GaTe2 is used as both the spin injector and detector.Pronounced nonlocal spin valve signals can be observed when the magneticfield sweeps along the out-of-plane easy axis direction of Fe3GaTe2. This nonlocal spin valve signal persistseven at 320 K, realizing a room-temperature lateral spin valve infull vdW heterostructure. Additionally, a significant magnitude nonlocalspin valve signal can be detected even with the low bias current of1 & mu;A. Furthermore, the magnetic field angle-dependent nonlocalmeasurements revealed that the nonlocal spin valve behavior is closelyrelated to the robust large perpendicular magnetic anisotropy propertyof Fe3GaTe2. The nonlocal spin valve signalis prominent when the magnetic field is applied near the perpendiculardirection and disappears under the in-plane magnetic field. Theseresults demonstrate the potential of Fe3GaTe2 as a prospective candidate for constructing room-temperature, two-dimensionalvdW spintronic devices.