Strain relaxation in monolayer MoS2 over flexible substrate

被引:8
作者
Basu, Nilanjan [1 ,2 ]
Kumar, Ravindra [1 ,2 ]
Manikandan, D. [1 ,2 ,3 ]
Dastidar, Madhura Ghosh [1 ,2 ,4 ,5 ,6 ]
Hedge, Praveen [1 ,4 ,5 ,6 ]
Nayak, Pramoda K. [1 ,2 ,3 ,7 ]
Bhallamudi, Vidya Praveen [1 ,4 ,5 ,6 ]
机构
[1] Indian Inst Technol Madras, Dept Phys, Chennai 600036, India
[2] Indian Inst Technol Madras, 2D Mat Res & Innovat Grp, Chennai 600036, India
[3] Indian Inst Technol Madras, Micro Nano & Biofluid Grp, Chennai 600036, India
[4] Indian Inst Technol Madras, Quantum Ctr Excellence Diamond, Chennai 600036, India
[5] Indian Inst Technol Madras, Dept Phys, Emerging Mat QuCenDiEM Grp, Chennai 600036, India
[6] Indian Inst Technol Madras, Dept Elect Engn, Emerging Mat QuCenDiEM Grp, Chennai 600036, India
[7] Jain Deemed Univ, Ctr Nano & Mat Sci, Jain Global Campus, Bangalore 562112, Karnataka, India
关键词
GRAPHENE; PHOTOLUMINESCENCE; PIEZOELECTRICITY; WS2;
D O I
10.1039/d3ra01381b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this communication, we demonstrate uniaxial strain relaxation in monolayer (1L) MoS2 transpires through cracks in both single and double-grain flakes. Chemical vapour deposition (CVD) grown 1L MoS2 has been transferred onto polyethylene terephthalate (PET) and poly(dimethylsiloxane) (PDMS) substrates for low (similar to 1%) and high (1-6%) strain measurements. Both Raman and photoluminescence (PL) spectroscopy revealed strain relaxation via cracks in the strain regime of 4-6%. In situ optical micrographs show the formation of large micron-scale cracks along the strain axis and ex situ atomic force microscopy (AFM) images reveal the formation of smaller lateral cracks due to the strain relaxation. Finite element simulation has been employed to estimate the applied strain efficiency as well as to simulate the strain distribution for MoS2 flakes. The present study reveals the uniaxial strain relaxation mechanism in 1L MoS2 and paves the way for exploring strain relaxation in other transition metal dichalcogenides (TMDCs) as well as their heterostructures.
引用
收藏
页码:16241 / 16247
页数:7
相关论文
共 48 条
[1]   Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1-&ITx&ITW&ITx&ITTe2 [J].
Aslan, Ozgur Burak ;
Datye, Isha M. ;
Mleczko, Michal J. ;
Cheung, Karen Sze ;
Krylyuk, Sergiy ;
Bruma, Alina ;
Kalish, Irina ;
Davydov, Albert V. ;
Pop, Eric ;
Heinz, Tony F. .
NANO LETTERS, 2018, 18 (04) :2485-2491
[2]   Stretching and Breaking of Ultrathin MoS2 [J].
Bertolazzi, Simone ;
Brivio, Jacopo ;
Kis, Andras .
ACS NANO, 2011, 5 (12) :9703-9709
[3]   Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2 [J].
Carrascoso, Felix ;
Li, Hao ;
Frisenda, Riccardo ;
Castellanos-Gomez, Andres .
NANO RESEARCH, 2021, 14 (06) :1698-1703
[4]   Elasticity of MoS2 Sheets by Mechanical Deformation Observed by in Situ Electron Microscopy [J].
Casillas, Gilberto ;
Santiago, Ulises ;
Barron, Hector ;
Alducin, Diego ;
Ponce, Arturo ;
Jose-Yacaman, Miguel .
JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (01) :710-715
[5]   Substrate-induced strain and charge doping in CVD-grown monolayer MoS2 [J].
Chae, Woo Hyun ;
Cain, Jeffrey D. ;
Hanson, Eve D. ;
Murthy, Akshay A. ;
Dravid, Vinayak P. .
APPLIED PHYSICS LETTERS, 2017, 111 (14)
[6]   First-Principles Study on the Effect of Strain on Single-Layer Molybdenum Disulfide [J].
Chong, Chen ;
Liu, Hongxia ;
Wang, Shulong ;
Yang, Kun .
NANOMATERIALS, 2021, 11 (11)
[7]   Monolayer MoS2 Strained to 1.3% With a Microelectromechanical System [J].
Christopher, Jason W. ;
Vutukuru, Mounika ;
Lloyd, David ;
Bunch, J. Scott ;
Goldberg, Bennett B. ;
Bishop, David J. ;
Swan, Anna K. .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2019, 28 (02) :254-263
[8]   Bandgap Engineering of Strained Monolayer and Bilayer MoS2 [J].
Conley, Hiram J. ;
Wang, Bin ;
Ziegler, Jed I. ;
Haglund, Richard F., Jr. ;
Pantelides, Sokrates T. ;
Bolotin, Kirill I. .
NANO LETTERS, 2013, 13 (08) :3626-3630
[9]   Quantum emitters and detectors based on 2D van der Waals materials [J].
Dastidar, Madhura Ghosh ;
Thekkooden, Immanuel ;
Nayak, Pramoda K. ;
Bhallamudi, Vidya Praveen .
NANOSCALE, 2022, 14 (14) :5289-5313
[10]   Strain-Induced Indirect to Direct Bandgap Transition in Multi layer WSe2 [J].
Desai, Sujay B. ;
Seol, Gyungseon ;
Kang, Jeong Seuk ;
Fang, Hui ;
Battaglia, Corsin ;
Kapadia, Rehan ;
Ager, Joel W. ;
Guo, Jing ;
Javey, Ali .
NANO LETTERS, 2014, 14 (08) :4592-4597