Interplay between Strain and Defects at the Interfaces of Ultra-Thin Hf0.5Zr0.5O2-Based Ferroelectric Capacitors

被引：14

作者：

Segantini, Greta ^{[1
,2
,3
]}

Manchon, Benoit ^{[4
]}

Infante, Ingrid Canero ^{[5
]}

Bugnet, Matthieu ^{[6
]}

Barhoumi, Rabei ^{[1
]}

Nirantar, Shruti ^{[2
,3
]}

Mayes, Edwin ^{[7
]}

Romeo, Pedro Rojo ^{[1
]}

Blanchard, Nicholas ^{[8
]}

Deleruyelle, Damien ^{[4
]}

Sriram, Sharath ^{[2
,3
]}

Vilquin, Bertrand ^{[1
]}

机构：

[1] Univ Lyon, UCBL, Ecole Cent Lyon, INSA Lyon,CPE Lyon,CNRS,INL,UMR5270, F-69130 Ecully, France

[2] RMIT Univ, Funct Mat & Microsyst Res Grp, Melbourne, Vic 3001, Australia

[3] RMIT Univ, Micro Nano Res Facil, Melbourne, Vic 3001, Australia

[4] Univ Lyon, Ecole Cent Lyon, UCBL, INSA Lyon,CPE Lyon,CNRS,INL,UMR5270, F-69621 Villeurbanne, France

[5] Univ Lyon, Ecole Cent Lyon, CNRS, INSA Lyon,CPE Lyon,CNRS,INL,UMR5270, F-69621 Villeurbanne, France

[6] Univ Lyon, UCBL, CNRS, INSA Lyon,MATEIS,UMR 5510, F-69621 Villeurbanne, France

[7] RMIT Univ, RMIT Microscopy & Microanal Facil, Melbourne, Vic 3001, Australia

[8] Univ Lyon 1, Univ Lyon, Inst Lumiere Matiere, UMR5306,CNRS, F-69622 Villeurbanne, France

来源：

ADVANCED ELECTRONIC MATERIALS | 2023年 / 9卷 / 10期

关键词：

electrode; HZO interfaces; ferroelectricity; HZO; thin-films; WAKE-UP; ELECTRICAL-PROPERTIES; FILMS; LAYER; POLARIZATION; PHASE;

D O I：

10.1002/aelm.202300171

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal-oxide-semiconductor technology. Ferroelectricity in HZO films is significantly influenced by the properties of electrode/HZO interfaces. Here, the impact of the interfacial microstructure and chemistry on the ferroelectricity of 6 nm-thick HZO-based capacitors, realized by sputtering, with titanium nitride or tungsten electrode materials, is investigated. The results highlight a strong correlation between the structural properties of electrode/HZO interfaces and the HZO ferroelectric performance. Interface effects become significant at low HZO thickness, thus the precise control over the quality of electrode/HZO interfaces allows the remarkable improvement of HZO ferroelectric properties. A double remanent polarization of 40 & mu;C cm(-2) is achieved. This work is a new step towards high quality ultra-thin HZO films with enhanced ferroelectricity for the implementation of ferroelectric tunnel junctions for brain-inspired computing.

引用

页数：10

共 71 条

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