On the electronic and spin-valley coupling of vanadium doped MoS2(1- x )Se2x monolayers

被引：6

作者：

Maity, Dipak ^{[1
]}

Sharma, Rahul ^{[1
]}

Sahoo, Krishna Rani ^{[1
]}

Panda, Janmey Jay ^{[1
]}

Lal, Ashique ^{[1
]}

Puthirath, Anand B. ^{[2
]}

Ajayan, Pulickel M. ^{[2
]}

Narayanan, Tharangattu N. ^{[1
]}

机构：

[1] Tata Inst Fundamental Res Hyderabad, Hyderabad 500046, India

[2] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2023年 / 35卷 / 50期

关键词：

MoS2; valleytronics; spin-orbit coupling; p-doping; DFT; valley splitting; POLARIZATION;

D O I：

10.1088/1361-648X/acf9d5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Monolayers of MoS2 with tunable bandgap and valley positions are highly demanding for their applications in opto-spintronics. Herein, selenium (Se) and vanadium (V) co-doped MoS2 monolayers (vanadium doped MoS2(1-x)Se2x (V-MoSSe)) are developed and showed their variations in the electronic and optical properties with dopant content. Vanadium gets substitutionally (in place of Mo) doped within the MoS2 lattice while selenium doped in place of sulfur, as shown by a detailed microstructure and spectroscopy analyses. The bandgap tunability with selenium doping can be achieved while valley shift is occurred due to the doping of vanadium. Chemical vapor deposition assisted grown MoS2 (also selenium doped MoS2 as shown here) is known for its n-type transport behavior while vanadium doping is found to be changing its nature to p-doping. Chirality dependent photoexcitation studies indicate a room temperature valley splitting in V-MoSSe (similar to 8 meV), where such a valley splitting is verified using density functional theory based calculations.

引用

页数：10

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