Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND

被引：6

作者：

Pesic, Milan ^{[1
]}

Beltrando, Bastien ^{[1
]}

Rollo, Tommaso ^{[1
]}

Zambelli, Cristian ^{[2
]}

Padovani, Andrea ^{[3
]}

Micheloni, Rino ^{[4
]}

Maji, Rita ^{[3
]}

Enman, Lisa ^{[1
]}

Saly, Mark ^{[1
]}

Bae, Yang Ho ^{[1
]}

Kim, Jung Bae ^{[1
]}

Yim, Dong Kil ^{[1
]}

Larcher, Luca ^{[1
]}

机构：

[1] Appl Mat Inc, 3050 Bowers Ave, Santa Clara, CA 95054 USA

[2] Univ Ferrara, Dipartimento Ingn, Ferrara, Italy

[3] Univ Modena & Reggio Emilia, DISIMI, Reggio Emilia, Italy

[4] Avaneidi Srl, Saronno, VA, Italy

来源：

2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS | 2023年

关键词：

3D NAND; Retention; T-Cross; Flash; Storage; OPERATIONS; RRAM;

D O I：

10.1109/IRPS48203.2023.10117898

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Continuation of the scaling and increase of the storage density of the 3D NAND requires minimization and control of variability sources. Among the various reliability challenges, cross-temperature phenomena are considered as one of the reliability limiting factors of state-of-the-art 3D NAND devices. Starting from hypothesis that cross temperature effects are dominated by polycrystalline channel and retention loss at elevated temperature, we: (1) capture and quantify cell-to-cell variability sources within the Page; (2) provide first material and device driven insight (focusing on polyslicon) and its impact on cross-temperature along the Page and String and (3) link them with fail-bits of TLC-encoded 3D NAND.

引用

页数：8

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