Effect of an ultrathin Fe interlayer on the growth of MnGa and spin-orbit-torque induced magnetization switching

被引：2

作者：

Ogawa, Mineto ^{[1
]}

Hara, Takuya ^{[1
]}

Hasebe, Shun ^{[1
]}

Yamanouchi, Michihiko ^{[1
]}

Uemura, Tetsuya ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo 0600814, Japan

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 06期

基金：

日本学术振兴会;

关键词：

MnGa; perpendicular spin source; spin orbit torque; GaAs; EPITAXIAL-GROWTH; FILMS;

D O I：

10.35848/1882-0786/acdb2c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effect of an ultrathin Fe interlayer on the growth of MnGa and spin-orbit torque (SOT) induced magnetization switching. MnGa was epitaxially grown on Fe at room temperature without thermal annealing. The MnGa/Fe bilayer was perpendicularly magnetized, and clear magnetization switching of the MnGa/Fe bilayer using the spin current, mainly from the adjacent Ta, was observed. The insertion of the Fe layer reduced the switching current density and increased a SOT-originated effective magnetic field. These results indicate that the MnGa/Fe bilayer is a promising spin source, capable of both perpendicular spin injection into GaAs and electrical manipulation of its spin direction.

引用

页数：4

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