Effect of an ultrathin Fe interlayer on the growth of MnGa and spin-orbit-torque induced magnetization switching

被引：2

作者：

Ogawa, Mineto ^{[1
]}

Hara, Takuya ^{[1
]}

Hasebe, Shun ^{[1
]}

Yamanouchi, Michihiko ^{[1
]}

Uemura, Tetsuya ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo 0600814, Japan

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 06期

基金：

日本学术振兴会;

关键词：

MnGa; perpendicular spin source; spin orbit torque; GaAs; EPITAXIAL-GROWTH; FILMS;

D O I：

10.35848/1882-0786/acdb2c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effect of an ultrathin Fe interlayer on the growth of MnGa and spin-orbit torque (SOT) induced magnetization switching. MnGa was epitaxially grown on Fe at room temperature without thermal annealing. The MnGa/Fe bilayer was perpendicularly magnetized, and clear magnetization switching of the MnGa/Fe bilayer using the spin current, mainly from the adjacent Ta, was observed. The insertion of the Fe layer reduced the switching current density and increased a SOT-originated effective magnetic field. These results indicate that the MnGa/Fe bilayer is a promising spin source, capable of both perpendicular spin injection into GaAs and electrical manipulation of its spin direction.

引用

页数：4

共 34 条

[1] Spin injection from perpendicular magnetized ferromagnetic δ-MnGa into (Al,Ga)As heterostructures [J].

Adelmann, C. ;

Hilton, J. L. ;

Schultz, B. D. ;

McKernan, S. ;

Palmstrom, C. J. ;

Lou, X. ;

Chiang, H. -S. ;

Crowell, P. A. .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[2] Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source [J].

Akiho, Takafumi ;

Shan, Jinhai ;

Liu, Hong-xi ;

Matsuda, Ken-ichi ;

Yamamoto, Masafumi ;

Uemura, Tetsuya .

PHYSICAL REVIEW B, 2013, 87 (23)

[3] Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier [J].

Akiho, Takafumi ;

Uemura, Tetsuya ;

Harada, Masanobu ;

Matsuda, Ken-ichi ;

Yamamoto, Masafumi .

APPLIED PHYSICS LETTERS, 2011, 98 (23)

[4] Mn3Ga, a compensated ferrimagnet with high Curie temperature and low magnetic moment for spin torque transfer applications [J].

Balke, Benjamin ;

Fecher, Gerhard H. ;

Winterlik, Juergen ;

Felser, Claudia .

APPLIED PHYSICS LETTERS, 2007, 90 (15)

[5] Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches -: art. no. 054416 [J].

Butler, WH ;

Zhang, XG ;

Schulthess, TC ;

MacLaren, JM .

PHYSICAL REVIEW B, 2001, 63 (05)

[6] Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature [J].

Chen, L. ;

Decker, M. ;

Kronseder, M. ;

Islinger, R. ;

Gmitra, M. ;

Schuh, D. ;

Bougeard, D. ;

Fabian, J. ;

Weiss, D. ;

Back, C. H. .

NATURE COMMUNICATIONS, 2016, 7

[7] Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction [J].

Cubukcu, Murat ;

Boulle, Olivier ;

Drouard, Marc ;

Garello, Kevin ;

Avci, Can Onur ;

Miron, Ioan Mihai ;

Langer, Juergen ;

Ocker, Berthold ;

Gambardella, Pietro ;

Gaudin, Gilles .

APPLIED PHYSICS LETTERS, 2014, 104 (04)

[8] Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties [J].

Ebina, Yuya ;

Akiho, Takafumi ;

Liu, Hong-xi ;

Yamamoto, Masafumi ;

Uemura, Tetsuya .

APPLIED PHYSICS LETTERS, 2014, 104 (17)

[9] Magnetization switching schemes for nanoscale three-terminal spintronics devices [J].

Fukami, Shunsuke ;

Ohno, Hideo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (08)

[10] Electron spin injection into GaAs from ferromagnetic contacts in remanence -: art. no. 032502 [J].

Gerhardt, NC ;

Hövel, S ;

Brenner, C ;

Hofmann, MR ;

Lo, FY ;

Reuter, D ;

Wieck, AD ;

Schuster, E ;

Keune, W ;

Westerholt, K .

APPLIED PHYSICS LETTERS, 2005, 87 (03)

← 1 2 3 4 →