Van der Waals-Interface-Dominated All-2D Electronics

被引:42
|
作者
Zhang, Xiankun [1 ,2 ]
Zhang, Yanzhe [1 ,2 ]
Yu, Huihui [1 ,2 ]
Zhao, Hang [1 ,2 ]
Cao, Zhihong [1 ,2 ]
Zhang, Zheng [1 ,2 ]
Zhang, Yue [1 ,2 ]
机构
[1] Univ Sci & Technol Beijing, Acad Adv Interdisciplinary Sci & Technol, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Key Lab Adv Energy Mat & Technol, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; band alignment; electronics; heterostructures; van der Waals interfaces; HEXAGONAL BORON-NITRIDE; FIELD-EFFECT TRANSISTORS; ATOMIC LAYER DEPOSITION; 2D MATERIALS; CONTACT RESISTANCE; EPITAXIAL-GROWTH; 2-DIMENSIONAL HETEROSTRUCTURES; CHARGE-TRANSFER; BAND OFFSETS; GRAPHENE;
D O I
10.1002/adma.202207966
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
引用
收藏
页数:29
相关论文
共 50 条
  • [1] Thin-film electronics based on all-2D van der Waals heterostructures
    Liu, Xinling
    Yang, Xiaomin
    Sang, Weihui
    Huang, Hai
    Li, Wenwu
    Lin, Yen-Fu
    Chu, Junhao
    JOURNAL OF INFORMATION DISPLAY, 2021, 22 (04) : 231 - 245
  • [2] All-2D electronics for AI processing
    Wang, Fang
    Hu, Weida
    NATURE MATERIALS, 2023, 22 (12) : 1470 - +
  • [3] All-2D electronics for AI processing
    Fang Wang
    Weida Hu
    Nature Materials, 2023, 22 : 1433 - 1434
  • [4] All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts
    Hoque, Md. Anamul
    George, Antony
    Ramachandra, Vasudev
    Najafidehaghani, Emad
    Gan, Ziyang
    Mitra, Richa
    Zhao, Bing
    Sahoo, Satyaprakash
    Abrahamsson, Maria
    Liang, Qiuhua
    Wiktor, Julia
    Turchanin, Andrey
    Kubatkin, Sergey
    Lara-Avila, Samuel
    Dash, Saroj P.
    NPJ 2D MATERIALS AND APPLICATIONS, 2024, 8 (01)
  • [5] p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices
    Li, Pan
    Yuan, Kai
    Lin, Der-Yuh
    Wang, Tingting
    Du, Wanying
    Wei, Zhongming
    Watanabe, Kenji
    Taniguchi, Takashi
    Ye, Yu
    Dai, Lun
    RSC ADVANCES, 2019, 9 (60) : 35039 - 35044
  • [6] Flexible electronics and optoelectronics of 2D van der Waals materials
    Huihui Yu
    Zhihong Cao
    Zheng Zhang
    Xiankun Zhang
    Yue Zhang
    InternationalJournalofMinerals,MetallurgyandMaterials, 2022, (04) : 671 - 690
  • [7] Flexible electronics and optoelectronics of 2D van der Waals materials
    Yu, Huihui
    Cao, Zhihong
    Zhang, Zheng
    Zhang, Xiankun
    Zhang, Yue
    INTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS, 2022, 29 (04) : 671 - 690
  • [8] Flexible electronics and optoelectronics of 2D van der Waals materials
    Huihui Yu
    Zhihong Cao
    Zheng Zhang
    Xiankun Zhang
    Yue Zhang
    International Journal of Minerals, Metallurgy and Materials, 2022, 29 : 671 - 690
  • [9] Bismuth oxychloride as a van der Waals dielectric for 2D electronics
    Kondusamy, Aswin L. N.
    Liu, Wenhao
    Roy, Joy
    Zhu, Xiangyu
    Smith, Connor, V
    Wang, Xinglu
    Young, Chadwin
    Kim, Moon J.
    Wallace, Robert M.
    Vandenberghe, William G.
    Lv, Bing
    NANOTECHNOLOGY, 2025, 36 (18)
  • [10] Operational Limits and Failure Mechanisms in All-2D van der Waals Vertical Heterostructure Devices with Long-Lived Persistent Electroluminescence
    Hou, Linlin
    Zhang, Qianyang
    Shautsova, Viktoryia
    Warner, Jamie H.
    ACS NANO, 2020, 14 (11) : 15533 - 15543