Ultra-high resistive switching current ratio and improved ferroelectricity and dielectric tunability performance in a BaTiO3/La0.7Sr0.3MnO3 heterostructure by inserting a SrCoO2.5 layer

被引：5

作者：

Zhang, Xi ^{[1
,2
]}

Chen, Xin ^{[2
]}

Cao, J. P. ^{[1
,2
]}

Wang, H. W. ^{[1
,2
]}

Deng, W. Y. ^{[1
,2
]}

Yang, L. H. ^{[3
]}

Lin, K. ^{[2
]}

Li, Q. ^{[2
]}

Li, Q. H. ^{[2
]}

Cao, Y. L. ^{[2
]}

Deng, J. X. ^{[2
]}

Miao, Jun ^{[1
,2
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Univ Sci & Technol Beijing, Inst Solid State Chem, Beijing 100083, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

NANOSCALE | 2024年 / 16卷 / 06期

基金：

北京市自然科学基金; 国家重点研发计划; 美国国家科学基金会;

关键词：

THIN-FILMS; PHASE-TRANSFORMATION; BROWNMILLERITE; FATIGUE;

D O I：

10.1039/d3nr04591a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A BaTiO3/SrCoO2.5 (BTO/SCO) bilayer and a BTO single film were prepared by radio frequency magnetron sputtering on La0.7Sr0.3MnO3 (LSMO) buffered SrTiO3 (001) substrates. Interestingly, compared with reported BTO-based films, the BTO/SCO/LSMO heterostructure has a maximum ON/OFF current ratio of similar to 945. More interestingly, compared with the BTO single layer, a larger P-r (similar to 18.4 mu C cm(-2)) and larger dielectric tunability (similar to 71.9%) were achieved in the BTO/SCO bilayer. The improved performance may be attributed to the large tetragonality and improved oxygen vacancy concentrations in the BTO/SCO/LSMO heterostructure. Furthermore, our BTO/SCO/LSMO stacks exhibit potential for flexible electronic informational devices.

引用

页码：3081 / 3090

页数：10

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