Extended wavelength and enhanced sensitivity of PbS colloidal quantum dots/Bi2Te3 photodetector by band alignment engineering

被引:4
作者
Yu, Lijing [1 ,2 ,3 ]
Tian, Pin [2 ,3 ]
Tang, Libin [1 ,2 ,3 ]
Hao, Qun [1 ]
Teng, Kar Seng [1 ,4 ]
Zhong, Hefu [5 ]
Zuo, Wenbin [2 ,3 ]
Ji, Yulong [2 ]
Li, Hongfu [2 ]
Li, Zhihua [2 ]
Ma, Qi [2 ]
Yang, Min [2 ]
Yu, Lianjie [2 ]
机构
[1] Beijing Inst Technol, Sch Opt & Photon, Lab Photon Informat Technol, Minist Ind & Informat Technol, Beijing 100081, Peoples R China
[2] Kunming Inst Phys, Kunming 650223, Peoples R China
[3] Yunnan Key Lab Adv Photoelect Mat & Devices, Kunming 650223, Peoples R China
[4] Swansea Univ, Dept Elect & Elect Engn, Bay Campus,Fabian Way, Swansea SA1 8EN, Wales
[5] Yunnan Univ, Sch Mat & Energy, Kunming 650500, Peoples R China
关键词
PbS colloidal quantum dots; Bi2Te3; Extended wavelength; Photodetector; Band alignment engineering; Stability; DOTS; PHOTOVOLTAICS; NANOCRYSTALS; PEROVSKITE; GRAPHENE;
D O I
10.1016/j.matdes.2023.111934
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The tunable band gap of PbS colloidal quantum dots (CQDs) from ultraviolet (UV) to short-wave infrared (SWIR) bands provides many potential applications in optoelectronics. However, synthesis of large-sized CQDs that exhibit good stability and sensitivity for extended wavelength still remains a technological challenge. In this paper, a novel broadband photodetector based on small size PbS CQDs (with exciton absorption peak at 927 nm) and Bi2Te3 (with wide spectral sensitivity and high absorption) was devel-oped and studied. The device, which comprised of ITO/AZO/PbS CQDs/Bi2Te3/Al, provided an excellent band alignment that facilitated charge dissociation and transmission hence improving the device sensi-tivity. Furthermore, wavelength extension was also realized through the synergistic effect of these mate-rials, thus demonstrating broadband photodetection with high sensitivity. The heterostructure photodetector demonstrated good performance in the visible and near infrared ranges, especially at a wavelength of 1050 nm exhibiting a high responsivity (R) and detectivity (D*) of 161 A/W and 3.2 x 1013 Jones, respectively. In addition, the device exhibited excellent stability and reversibility after one month of storage without any encapsulation. This work lays a good foundation for the construction of the next generation of highly sensitive broadband CQDs photodetectors.& COPY; 2023 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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页数:7
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