Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures

被引：4

作者：

Park, Do-Hyun ^{[1
]}

Lee, Hyo Chan ^{[2
]}

机构：

[1] Konkuk Univ, Div Quantum Phase & Devices, Seoul 05029, South Korea

[2] Myongji Univ, Chem Engn, Yongin 17058, South Korea

来源：

MICROMACHINES | 2023年 / 14卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

2D materials; photodetectors; van der Waals heterostructure; P-N-JUNCTIONS; BROAD-BAND; INFRARED PHOTODETECTION; HIGH RESPONSIVITY; HIGH-DETECTIVITY; MONOLAYER MOS2; GRAPHENE; HYBRID; SINGLE;

D O I：

10.3390/mi14010140

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488-1550 nm).

引用

页数：10

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